Ceramic coatings containing two-dimensional materials (2D materials) provide effective protection for light alloys during wear, significantly improving their anti-friction performance. MoS2 has proven highly effective in enhancing the anti-friction performance of ceramic coatings, particularly when synthesized via plasma electrolytic oxidation (PEO). However, dislocation pinning due to the incoherent interfaces in MoS2/TiO2 coatings tends to cause localized stress concentrations and brittle fracture, requiring effectively improve nanomechanical properties by optimizing interface design. To address these issues, this study used ultrasonic-assisted PEO to disperse graphene oxide (GO), which provided more possibility for in-situ synthesis MoS2, ultimately resulting in MoS2 with modified interlayer spacing. The change in interlayer spacing induced dislocation evolution at incoherent interface, leading to dual interface formation. At MoS2 (0.534 nm)/TiO2 interface: dislocation dipoles evolve to create considerable distortion, facilitating releasing shear stresses and inhibiting crack propagations. This process is followed by dislocation annihilation, keeping to stable interfacial bonding. Additionally, the others form strong dislocation pinning to obstruct dislocation slip and enhancing deformation resistance at MoS2 (0.227 nm)/TiO2 interface. The combined effects of dual interfacial enhancements resulted in a 90.0 % reduction in friction coefficients of the MoS2/GO/TiO2 coating compared to the traditional ceramic coating. This facile technique provides a new strategy to fabricate self-lubricating ceramic coatings on light alloys, while the introduction of ultrasound during PEO offers valuable guidance for applying ultrasound in the synthesis of 2D materials.

中文翻译：

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超声波辅助 MoS2/GO/TiO2 陶瓷涂层：通过双界面优化提高减摩性能


含有二维材料（2D 材料）的陶瓷涂层在磨损过程中为轻合金提供有效保护，显著提高其减摩性能。MoS2 已被证明在增强陶瓷涂层的减摩性能方面非常有效，尤其是在通过等离子体电解氧化 （PEO） 合成时。然而，MoS2/TiO2涂层中由于不相干界面引起的位错钉扎往往会导致局部应力集中和脆性断裂，需要通过优化界面设计来有效提高纳米力学性能。为了解决这些问题，本研究使用超声波辅助 PEO 分散氧化石墨烯 （GO），这为原位合成 MoS2 提供了更多可能性，最终产生了具有改性层间距的 MoS2。层间距的变化在不相干界面处诱导位错演变，导致双界面形成。在 MoS2 （0.534 nm）/TiO2 界面处：位错偶极子演变成相当大的变形，有助于释放剪切应力并抑制裂纹扩展。这个过程之后是位错湮灭，保持稳定的界面键合。此外，其他石墨形成强位错针刺以阻止位错滑移并增强 MoS2 （0.227 nm）/TiO2 界面的变形阻力。与传统陶瓷涂层相比，双重界面增强的综合效果使 MoS2/GO/TiO2 涂层的摩擦系数降低了 90.0%。这种简单的技术提供了一种在轻合金上制造自润滑陶瓷涂层的新策略，而在 PEO 过程中引入超声波为在二维材料合成中的应用提供了有价值的指导。