Low‐dimensional nanomaterials show great potential for developing semiconducting materials due to their distinct electronic, optical, and mechanical properties. In this study, we constructed various one‐dimensional ZnSe nanotubes and investigated their transport and photoresponse properties by using the density functional theory (DFT) and non‐equilibrium Green's function (NEGF) method. Under bias regulation, one‐dimensional tetragonal ZnSe nanotube curled along the diagonal can reach a current of 111.3 μA at a bias of 4.0 eV. It is worth noting that for all considered photon energies, the photocurrent exhibits a cosine dependence on the polarization angle, which is consistent with the photogalvanic effect. The results show that our constructed ZnSe nanotubes have potential for applications in electronic and optoelectronic devices.

中文翻译：

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用于高性能光电探测器的单壁 ZnSe 纳米管：计算预测


低维纳米材料由于其独特的电子、光学和机械特性，在开发半导体材料方面显示出巨大的潜力。在这项研究中，我们构建了各种一维 ZnSe 纳米管，并使用密度泛函理论 （DFT） 和非平衡格林函数 （NEGF） 方法研究了它们的传输和光响应特性。在偏置调节下，沿对角线卷曲的一维四方 ZnSe 纳米管在 4.0 eV 的偏置电压下可以达到 111.3 μA 的电流。值得注意的是，对于所有考虑的光子能量，光电流都表现出对偏振角的余弦依赖性，这与光电流效应一致。结果表明，我们构建的 ZnSe 纳米管在电子和光电器件中具有应用潜力。