Recent progress has shown that alloying cadmium telluride (CdTe) with cadmium selenide (CdSe) to create a CdSe_xTe_1–x (CdSeTe) gradient region can significantly boost the performance of polycrystalline CdSeTe thin-film solar cells. However, improper CdSeTe alloying might introduce problematic band alignment and deleterious voids at the front interface, limiting the benefit maximization of this technique. Here, we show that the CdSe layers deposited by thermal evaporation result in CdSeTe cells with a higher performance than the sputtered CdSe. This is because evaporated CdSe can avoid the formation of voids at the front interface, producing improved front junction quality with suppressed front junction nonradiative recombination. The champion cell using evaporated CdSe demonstrated a power conversion efficiency (PCE) of 19.7%, much higher than 18.1% in the cell using sputtered CdSe.

中文翻译：

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用于高效多晶 CdSeTe 薄膜太阳能电池的蒸发 CdSe


最近的进展表明，将碲化镉 （CdTe） 与硒化镉 （CdSe） 合金化以产生 CdSe_xTe_1–x （CdSeTe） 梯度区域可以显着提高多晶 CdSeTe 薄膜太阳能电池的性能。然而，不正确的 CdSeTe 合金化可能会在前界面引入有问题的条带对齐和有害的空隙，从而限制该技术的效益最大化。在这里，我们表明，通过热蒸发沉积的 CdSe 层导致 CdSeTe 电池比溅射的 CdSe 电池具有更高的性能。这是因为蒸发的 CdSe 可以避免在前界面形成空隙，从而通过抑制前结非辐射复合来提高前结质量。使用蒸发 CdSe 的冠军电池的功率转换效率 （PCE） 为 19.7%，远高于使用溅射 CdSec 的电池的 18.1%。