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Synthesis and Stability Phase Diagram of Topological Semimetal Family LnSbxTe2–x–δ
Chemistry of Materials ( IF 7.2 ) Pub Date : 2024-12-04 , DOI: 10.1021/acs.chemmater.4c02198
Tyger H. Salters, James Colagiuri, Andre Koch Liston, Josh Leeman, Tanya Berry, Leslie M. Schoop

The solid solution LnSbxTe2–x–δ (Ln = lanthanide) is a family of square-net topological semimetals that exhibit tunable charge density wave (CDW) distortions and band filling dependent on x, offering broad opportunities to examine the interplay of topological electronic states, CDW, and magnetism. While several Ln series have been characterized, gaps in the literature remain, inviting a systematic survey of the remaining composition space that is synthetically accessible. We present our efforts to synthesize LnSbxTe2–x–δ across the remaining lanthanides via chemical vapor transport. Compiling our results with the reported literature, we generate a stability phase diagram across the ranges of Ln and x. We find a stability boundary for intermediate x beyond Tb, while x = 1 and x = 0 can be isolated up to Ho and Dy, respectively. SEM and XRD analyses of unsuccessful reactions indicated the formation of several stable binary phases. The presence of structurally related LnTe3 in samples suggests that stability is limited by the size of Ln, due to increasing compressive strain along the layer stacking axis with decreasing size. Finally, we demonstrate that late Ln can be stabilized in LnSbxTe2–x–δ via substitution into larger Ln members, synthesizing La1–yHoySbxTe2–x–δ as a proof of concept.

中文翻译:


拓扑半金属族 LnSbxTe2–x–δ 的合成和稳定相图



固溶体 LnSbxTe2–x–δ (Ln = 镧系元素) 是一类方净拓扑半金属,表现出可调谐的电荷密度波 (CDW) 失真和取决于 x 的能带填充,为研究拓扑电子态、CDW 和磁性的相互作用提供了广泛的机会。虽然已经描述了几个 Ln 系列,但文献中的空白仍然存在,这需要对剩余的合成空间进行系统调查,这些空间是综合可访问的。我们介绍了通过化学蒸气传输在剩余镧系元素中合成 LnSbxTe2–x–δ 的努力。将我们的结果与报道的文献进行编译,我们生成了 Ln 和 x 范围内的稳定性相图。我们找到了超出 Tb 的中间体 x 的稳定性边界,而 x = 1 和 x = 0 可以分别隔离到 Ho 和 Dy。不成功反应的 SEM 和 XRD 分析表明形成了几个稳定的二元相。样品中存在结构相关的 LnTe3 表明稳定性受到 Ln 大小的限制,因为随着尺寸的减小,沿层堆叠轴的压缩应变增加。最后,我们证明晚期 Ln 可以通过取代成更大的 Ln 成员在 LnSbxTe 2-x-δ 中稳定,合成 La 1-yHoySbxTe 2-x-δ作为概念证明。
更新日期:2024-12-04
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