Erbium-doped waveguide amplifiers have recently sparked significant interest due to their importance in photonic integrated circuits and on-chip light sources. Erbium-doped thin films deposited through the atomic layer deposition technique hold great potential for achieving excellent optical performance and integration with various material platforms. Here, we demonstrate hybrid erbium-doped waveguide amplifiers using atomic layer deposition and conduct a comprehensive characterization of their gains and output powers. A 9.31 cm amplifier reaches net gains of 14.4 ± 1.2 dB at 1531.6 nm and 13.7 ± 1.8 dB at 1550 nm. These correspond to directly measured off-chip gains of 10.5 ± 0.3 dB and 9.5 ± 0.8 dB at 1531.6 and 1550 nm, respectively. A maximum on-chip output power of 8.0 ± 1.6 dBm is achieved at 1550 nm. The amplifier exhibits a broadband net gain exceeding 9 dB across the C-band, with a low noise figure of 4.5 dB for an input power of <−18.6 dBm. This work paves the way for the future development of high-performance on-chip amplifiers and light sources.

中文翻译：

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原子层工程掺铒波导放大器，净增益为 14.4 dB


掺铒波导放大器因其在光子集成电路和片上光源中的重要性而最近引起了人们的极大兴趣。通过原子层沉积技术沉积的掺铒薄膜在实现出色的光学性能和与各种材料平台的集成方面具有巨大潜力。在这里，我们演示了使用原子层沉积的混合掺铒波导放大器，并对其增益和输出功率进行了全面表征。9.31 cm 放大器在 1531.6 nm 处的净增益为 14.4 ± 1.2 dB，在 1550 nm 处达到 13.7 ± 1.8 dB。这些对应于在 1531.6 和 1550 nm 处分别为 10.5 ± 0.3 dB 和 9.5 ± 0.8 dB 的直接测量片外增益。在 1550 nm 处可实现 8.0 ± 1.6 dBm 的最大片上输出功率。该放大器在 C 频段的宽带净增益超过 9 dB，对于 <−18.6 dBm 的输入功率，噪声系数为 4.5 dB。这项工作为高性能片上放大器和光源的未来发展铺平了道路。