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Large Scale Lead-Free Perovskite Polycrystalline Wafer Achieved by Hot-Pressed Strategy for High-Performance X-Ray Detection
Advanced Materials ( IF 27.4 ) Pub Date : 2024-12-02 , DOI: 10.1002/adma.202413709 Ji Yu, Yinxian Luo, Ning Tian, Yucheng Liu, Zhou Yang, Jiacheng Pi, Lin Li, Ruoning Zheng, Chengyuan Wang, Shengzhong (Frank) Liu
Advanced Materials ( IF 27.4 ) Pub Date : 2024-12-02 , DOI: 10.1002/adma.202413709 Ji Yu, Yinxian Luo, Ning Tian, Yucheng Liu, Zhou Yang, Jiacheng Pi, Lin Li, Ruoning Zheng, Chengyuan Wang, Shengzhong (Frank) Liu
Halide perovskites (HPs) have demonstrated excellent direct X-ray detection performance. Lead-free perovskite polycrystalline wafers have outstanding advantages in large-area X-ray imaging applications due to their area-scalability, thickness-controllability, large bulk resistivity, and ease of integration with large-area thin film transistor arrays. However, currently lead-free perovskite polycrystalline wafers possess low sensitivity, typically less than 1000 µC Gy−1 cm−2, which severely limits their X-ray detection applications. Here, high-quality and large scale polycrystalline wafers of AG3Bi2I9 (AG: aminoguanidinium) with short intercluster distances are successfully prepared using a hot-pressing method. The wafers possess high mobility-lifetime product of 5.66 × 10−3 cm2 V−1 and therefore achieve high X-ray sensitivity of 2675 µC Gy−1 cm−2, which can be comparable to those of the high-quality single crystal counterpart reported by the previous research (7.94 × 10−3 cm2 V−1 and 5791 µC Gy−1 cm−2), and represent the best results of the currently lead-free HP polycrystalline wafers. Besides, the wafers exhibit the X-ray detection limit as low as 11.8 nGy s−1, excellent long-term working stability, and high spatial resolution of 5.9 lp mm−1 in imaging. The findings demonstrate that AG3Bi2I9 polycrystalline wafers are feasible for high-performance X-ray detection and imaging system.
中文翻译:
通过热压策略实现高性能 X 射线检测的大规模无铅钙钛矿多晶晶片
卤化物钙钛矿 (HPs) 已表现出优异的直接 X 射线检测性能。无铅钙钛矿多晶晶片具有面积可扩展性、厚度可控性、大体电阻率以及易于与大面积薄膜晶体管阵列集成等特点,在大面积 X 射线成像应用中具有突出优势。然而,目前无铅钙钛矿多晶晶片的灵敏度较低,通常小于 1000 μC Gy-1 cm-2,这严重限制了它们的 X 射线检测应用。在这里,使用热压方法成功制备了具有短簇间距离的 AG3Bi2I9(AG:氨基胍)的高质量和大规模多晶晶片。晶圆具有 5.66 × 10-3 cm2 V-1 的高迁移率寿命积,因此实现了 2675 μC Gy-1 cm-2 的高 X 射线灵敏度,可以与先前研究报道的高质量单晶相当(7.94 × 10-3 cm2 V-1 和 5791 μC Gy-1 cm-2),代表了目前无铅 HP 多晶硅片的最佳结果。此外,晶片的 X 射线检出限低至 11.8 nGy s-1,出色的长期工作稳定性,以及 5.9 lp mm-1 的高空间分辨率成像。研究结果表明,AG3Bi2I9 多晶晶片可用于高性能 X 射线探测和成像系统。
更新日期:2024-12-03
中文翻译:
通过热压策略实现高性能 X 射线检测的大规模无铅钙钛矿多晶晶片
卤化物钙钛矿 (HPs) 已表现出优异的直接 X 射线检测性能。无铅钙钛矿多晶晶片具有面积可扩展性、厚度可控性、大体电阻率以及易于与大面积薄膜晶体管阵列集成等特点,在大面积 X 射线成像应用中具有突出优势。然而,目前无铅钙钛矿多晶晶片的灵敏度较低,通常小于 1000 μC Gy-1 cm-2,这严重限制了它们的 X 射线检测应用。在这里,使用热压方法成功制备了具有短簇间距离的 AG3Bi2I9(AG:氨基胍)的高质量和大规模多晶晶片。晶圆具有 5.66 × 10-3 cm2 V-1 的高迁移率寿命积,因此实现了 2675 μC Gy-1 cm-2 的高 X 射线灵敏度,可以与先前研究报道的高质量单晶相当(7.94 × 10-3 cm2 V-1 和 5791 μC Gy-1 cm-2),代表了目前无铅 HP 多晶硅片的最佳结果。此外,晶片的 X 射线检出限低至 11.8 nGy s-1,出色的长期工作稳定性,以及 5.9 lp mm-1 的高空间分辨率成像。研究结果表明,AG3Bi2I9 多晶晶片可用于高性能 X 射线探测和成像系统。