Two-dimensional (2D) lateral heterostructures and superlattices, especially those based on transition metal dichalcogenides, boast exceptional properties for electronics, optoelectronics, and photovoltaics. Our study delves into the intricate superlattice architecture of CrS₂/VS₂, as well as its magnetic and electronic attributes, utilizing the framework of density functional theory. The CrS₂/VS₂ superlattice, crafted by seamlessly stitching together CrS₂ and VS₂ monolayers along their armchair interfaces, demonstrates remarkable stability and magnetism. Notably, the magnetic phase transitions exhibited by this superlattice are intricately linked to its overall size and sublattice width. Furthermore, the electronic structures of these CrS₂/VS₂ superlattices exhibit a strong dependence on the widths of the CrS₂ and VS₂ ribbons. In smaller superlattices, spin-down electrons establish semiconductor–semiconductor contacts with a distinct type II band alignment. Conversely, spin-up electrons forge metal–metal contacts, facilitating spin-dependent 2D electron segregation. However, in larger superlattices, the electronic states are more constrained, leading to metal–semiconductor contacts that exhibit ohmic conductivity within a single spin channel. This versatility in integrating various magnetic and contact modes fosters multiple structural configurations, ushering in an exciting new paradigm characterized by significant tunability. This advancement holds immense promise for the development and application of multifunctional spintronic devices, offering a wide range of possibilities for future technological innovations.

中文翻译：

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CrS2/VS2 横向超晶格的可调磁性和电子特性


二维 （2D） 横向异质结构和超晶格，尤其是那些基于过渡金属硫化物的异质结构和超晶格，在电子学、光电子学和光伏学方面具有卓越的性能。我们的研究利用密度泛函理论的框架，深入研究了 CrS₂/VS₂ 错综复杂的超晶格结构，以及它的磁性和电子属性。CrS₂/VS₂ 超晶格是通过沿扶手椅界面将 CrS₂ 和 VS₂ 单层无缝缝合在一起而制成的，表现出卓越的稳定性和磁性。值得注意的是，该超晶格表现出的磁性相变与其整体尺寸和亚晶格宽度错综复杂地相关。此外，这些 CrS₂/VS₂ 超晶格的电子结构对 CrS₂ 和 VS₂ 带的宽度表现出很强的依赖性。在较小的超晶格中，自旋下降的电子建立具有不同 II 型能带排列的半导体-半导体接触。相反，自旋电子会形成金属-金属接触，从而促进自旋依赖的 2D 电子偏析。然而，在较大的超晶格中，电子态受到更多约束，导致金属-半导体接触在单个自旋通道内表现出欧姆电导率。这种集成各种磁性和接触模式的多功能性促进了多种结构配置，开创了一种令人兴奋的新范式，其特点是显着的可调性。 这一进步为多功能自旋电子器件的开发和应用带来了巨大的希望，为未来的技术创新提供了广泛的可能性。