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Defect engineering induced phase competition in BNT-based relaxor ferroelectrics for dielectric energy storage
Journal of Materiomics ( IF 8.4 ) Pub Date : 2024-11-29 , DOI: 10.1016/j.jmat.2024.100979 Dong-Xu Li, Zhipeng Li, Zong-Yang Shen, Xuhai Shi, Xiaojun Zeng, You Zhang, Wenqin Luo, Fusheng Song, Chao-Feng Wu
Journal of Materiomics ( IF 8.4 ) Pub Date : 2024-11-29 , DOI: 10.1016/j.jmat.2024.100979 Dong-Xu Li, Zhipeng Li, Zong-Yang Shen, Xuhai Shi, Xiaojun Zeng, You Zhang, Wenqin Luo, Fusheng Song, Chao-Feng Wu
Dielectric capacitors are independent in advanced electronics and pulse power systems as an energy storage and conversion medium. However, achieving high energy density at a low electric field remains challenging for dielectric materials to improve the safety of integrated electronic devices. In this work, the strategy of defect engineering-induced phase competition is proposed to improve the polarization behavior and strengthen dielectric temperature stability of (Bi,Na)TiO3 (BNT)-based relaxor ferroelectric, i.e., Na0.325Sr0.245Ba0.105–1.5x□0.5xBi0.325+xTiO3 (NSB0.105–1.5x□0.5xB0.325+xT) ceramics by changing the ratio of Bi3+/Ba2+. A high recoverable energy density (Wrec=3.6 J/cm3) is achieved at a relatively low electric field of 160 kV/cm for x=0.06 composition together with a high dielectric constant of 3142±15% in a wide temperature range of 30–386 °C, which exceeds other lead-free dielectric ceramics at the same electric field. The results demonstrate that NSB0.015□0.03B0.385T ceramics are desirable for advanced pulsed power capacitors and will push the development of defect-tuned functionality of dielectric ceramics for energy storage applications.
中文翻译:
缺陷工程诱导 BNT 基弛豫铁电体用于介电储能的相位竞争
介电电容器在先进电子和脉冲电源系统中作为能量存储和转换介质是独立的。然而,对于介电材料来说,在低电场下实现高能量密度仍然具有挑战性,以提高集成电子设备的安全性。在这项工作中,提出了缺陷工程诱导相位竞争的策略,以改善基于 (Bi,Na)TiO3 (BNT) 的弛豫铁电体的极化行为并加强介电温度稳定性,即 Na0.325Sr0.245Ba0.105–1.5x□0.5xBi0.325+xTiO3 (NSB0.105–1.5x□0.5xB0.325+x xT) 陶瓷。在 x=0.06 成分的 160 kV/cm 的相对较低的电场下实现了高可恢复能量密度 (Wrec=3.6 J/cm3),并且在 30–386 °C 的宽温度范围内实现了 3142±15% 的高介电常数,超过了相同电场下的其他无铅介电陶瓷。结果表明,NSB0.015□0.03B0.385T 陶瓷是先进脉冲电力电容器的理想选择,并将推动用于储能应用的介电陶瓷缺陷调谐功能的发展。
更新日期:2024-11-29
中文翻译:
缺陷工程诱导 BNT 基弛豫铁电体用于介电储能的相位竞争
介电电容器在先进电子和脉冲电源系统中作为能量存储和转换介质是独立的。然而,对于介电材料来说,在低电场下实现高能量密度仍然具有挑战性,以提高集成电子设备的安全性。在这项工作中,提出了缺陷工程诱导相位竞争的策略,以改善基于 (Bi,Na)TiO3 (BNT) 的弛豫铁电体的极化行为并加强介电温度稳定性,即 Na0.325Sr0.245Ba0.105–1.5x□0.5xBi0.325+xTiO3 (NSB0.105–1.5x□0.5xB0.325+x xT) 陶瓷。在 x=0.06 成分的 160 kV/cm 的相对较低的电场下实现了高可恢复能量密度 (Wrec=3.6 J/cm3),并且在 30–386 °C 的宽温度范围内实现了 3142±15% 的高介电常数,超过了相同电场下的其他无铅介电陶瓷。结果表明,NSB0.015□0.03B0.385T 陶瓷是先进脉冲电力电容器的理想选择,并将推动用于储能应用的介电陶瓷缺陷调谐功能的发展。