Nowadays Si & SiO2 have been the most widely used materials in semiconductor devices as CPU and other various integrated circuit chips, utilized in aerospace electronic systems, and at the same time protons are important components of cosmic rays that can cause displacement damage in Si & SiO2. Therefore, it is essential to study the displacement damage of Si & SiO2 caused by protons. The software of Geant4 is adopted in this paper, to simulate transportation process of incident protons with different energy in Si & SiO2. The simulation results indicates that primary knock-on atom (PKA) generated by incident proton in Si & SiO2 is predominant in lower energy range, its spatial distribution increases gradually along the direction of incident proton, and the scattering angle of the PKA is about 90°, following a Gaussian distribution approximately. And in lower energy range, 28Si and 16O generated by elastic scattering are a primary source of radiation damage in Si & SiO2. But as the proton energy increases, the contribution of nuclear inelastic scattering becomes more and more important, but the overall level of induced damage diminishes gradually. Meanwhile, the simulation results indicate that with increasing depth of the material, the non-ionizing energy loss (NIEL) increases gradually, and NIEL caused by elastic scattering is higher near the surface layer of the materials, and as for NIEL caused by nuclear inelastic scattering is also higher near the surface layer of the materials. The simulation results in this paper can provide useful data and theoretical guidance for study on Si & SiO2 displacement damage caused by proton irradiation.

中文翻译：

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模拟质子引起的 Si 和 SiO2 位移损伤


如今，Si和SiO2已成为半导体器件中应用最广泛的材料，如CPU和其他各种集成电路芯片，用于航空航天电子系统，同时质子是宇宙射线的重要组成部分，可以引起Si和SiO2的位移损伤。因此，研究质子引起的Si和SiO2的位移损伤至关重要。本文采用了Geant4的软件，以模拟Si和SiO2中不同能量的入射质子的传输过程。模拟结果表明，由Si和SiO2中的入射质子产生的初级反击原子（PKA）在较低的能量范围内占主导地位，其空间分布沿着入射质子的方向逐渐增加，PKA的散射角约为90°，大致遵循高斯分布。而在较低的能量范围内，由弹性散射产生的28Si和16O是Si和SiO2辐射损伤的主要来源。但随着质子能量的增加，核非弹性散射的贡献变得越来越重要，但诱导损伤的整体水平逐渐降低。同时，仿真结果表明，随着材料深度的增加，非电离能量损失（NIEL）逐渐增加，弹性散射引起的NIEL在材料表层附近较高，而核非弹性散射引起的NIEL在材料表层附近也较高。本文的仿真结果可为质子辐照引起的Si & SiO2位移损伤的研究提供有用的数据和理论指导。