The development of high-performance, low-power solar-blind photodetectors (SBPDs) holds significant promise for both military and civilian applications. Compared with wide-bandgap semiconductors, two-dimensional (2D) materials exhibit advantageous characteristics in the threshold and efficiency of carrier multiplication (CM) due to enhanced Coulomb interaction and relaxed momentum conservation. This allows one incident high-energy photon to generate two or more electron–hole pairs effectively, positioning them as viable alternatives for the fabrication of high-performance self-powered SBPDs. Here, we have designed a vertically aligned 2D WS₂/graphene photodetector with Au as the contact electrodes, forming a unilateral Schottky junction to facilitate the efficient transfer of high-energy electrons generated in the WS₂ to the graphene without thermal relaxation. This enables efficient CM within graphene, resulting in an ultrahigh responsivity of 77 mA/W and an external quantum efficiency of 36% at 265 nm light with zero bias. This work offers invaluable insights into the development of next-generation SBPDs with high performance and low power consumption.

中文翻译：

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在基于 WS2/石墨烯异质结构的自供电日盲光电探测器中通过载流子倍增实现超高光响应度


高性能、低功耗日盲光电探测器 （SBPD） 的开发为军事和民用应用带来了巨大的前景。与宽带隙半导体相比，二维 （2D） 材料由于增强的库仑相互作用和松弛的动量守恒，在载流子倍增 （CM） 的阈值和效率方面表现出有利特性。这使得一个入射的高能光子能够有效地产生两个或多个电子-空穴对，使它们成为制造高性能自供电 SBPD 的可行替代方案。在这里，我们设计了一个垂直排列的 2D WS₂/石墨烯光电探测器，以 Au 作为接触电极，形成单侧肖特基结，以促进 WS₂ 中产生的高能电子在没有热弛豫的情况下有效地转移到石墨烯。这使得石墨烯内实现了高效的 CM，从而在 265 nm 光下实现了 77 mA/W 的超高响应度和 36% 的外部量子效率，且零偏压。这项工作为开发具有高性能和低功耗的下一代 SBPD 提供了宝贵的见解。