Ferroelectric transistors based on hafnia-based ferroelectrics have emerged as promising candidates for next-generation memory devices. Additionally, hafnia-based ferroelectric transistors are suggested for three-dimensional (3D) memory devices, such as 3D ferroelectric NAND. This paper investigates the utilization of poly-Si as a gate material for hafnia-based ferroelectric transistors in 3D NAND structures. Conventional gate materials, such as TiN or W, are usually deposited in 3D NAND structures by using the gate-last process, which requires an additional gate replacement process. We demonstrate that poly-Si can be used as a gate material for hafnia-based ferroelectric transistors. We show that the 3D ferroelectric NAND based on the poly-Si gate can be fabricated by a simpler gate-first process without requiring a gate replacement process. Our findings underscore the potential of poly-Si as a gate material for ferroelectric transistors and 3D ferroelectric NAND.

中文翻译：

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具有多晶硅门的 Hafnia 基铁电晶体管，用于栅极优先的三维 NAND 结构


基于铪基铁电体的铁电晶体管已成为下一代存储器件的有前途的候选者。此外，建议将基于哈夫尼亚的铁电晶体管用于三维 （3D） 存储设备，例如 3D 铁电 NAND。本文研究了多晶硅作为 3D NAND 结构中铪基铁电晶体管的栅极材料。传统的栅极材料，如 TiN 或 W，通常使用栅极最后工艺沉积在 3D NAND 结构中，这需要额外的栅极更换工艺。我们证明了多晶硅可以用作铪基铁电晶体管的栅极材料。我们表明，基于多晶硅栅极的 3D 铁电 NAND 可以通过更简单的栅极优先工艺制造，而无需栅极更换工艺。我们的研究结果强调了多晶硅作为铁电晶体管和 3D 铁电 NAND 的栅极材料的潜力。