We achieved ultrahigh temperature stability of the piezoelectric coefficient d₃₃ by doping heterovalent ions in the PbZr_0.54Ti_0.46O₃ ceramics at the A/B sites in the ABO₃ lattice. The Sm³⁺-ion amount at the A-site remains constant, while the Ta⁵⁺-ion amount at the B-site changes. We utilized electron paramagnetic resonance (EPR) and X-ray photoelectron spectroscopy (XPS) to investigate the reduction of oxygen vacancies, which are closely associated with the defect dipoles formed by heterovalent doping. We utilized piezoresponse force microscopy (PFM), temperature-dependent X-ray diffraction (XRD) combined with Rietveld refinement, and temperature-dependent Raman spectroscopy to understand the mechanism of the temperature stability of the piezoelectric coefficient d₃₃. When x=0.01, the performance of xTa-0.01Sm-PbZr_0.54Ti_0.46O₃ ceramic is optimal: d₃₃=530 pC/N, electromechanical coupling factor k_p=0.72, Curie temperature T_C =343 °C, where the temperature stability of the piezoelectric coefficient is ultrahigh, and the d₃₃ changes only 2.2% over the 25−200 °C temperature range.

中文翻译：

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异价离子掺杂 PZT 陶瓷中的超高温稳定性


通过在 ABO₃ 晶格的 A/B 位点掺杂 PbZr_0.54Ti_0.46O₃ 陶瓷中的异价离子，实现了压电系数 d₃₃ 的超高温稳定性。A 位点的 Sm³⁺-离子量保持不变，而 B 位点的 Ta⁵⁺-离子量发生变化。我们利用电子顺磁共振 （EPR） 和 X 射线光电子能谱 （XPS） 来研究氧空位的减少，这与异价掺杂形成的缺陷偶极子密切相关。我们利用压电响应力显微镜 （PFM）、温度依赖性 X 射线衍射 （XRD） 结合 Rietveld 精修和温度依赖性拉曼光谱来了解压电系数 d₃₃ 的温度稳定性机制。当 x=0.01 时，xTa-0.01Sm-PbZr_0.54Ti_0.46O₃ 陶瓷的性能最佳：d₃₃=530 pC/N，机电耦合因子 k_p=0.72，居里温度 T_C =343 °C，其中压电系数的温度稳定性超高，d₃₃ 在 25−200 °C 的温度范围内仅变化 2.2%。