In this article we study the effect of conventional and stress annealing on the magnetic properties and giant magnetoimpedance (GMI) effect of Co_65.3Si_12.0B_10.2Cr_8.5Fe_3.9Mo_0.1 microwires with low and positive magnetostriction coefficient and low Curie temperature. A remarkable tuning capacity of both GMI effect and hysteresis loops is observed for a broad range of annealing conditions up to 350^∘C and 320 MPa. We report appearance of double-peaks magnetic field dependencies of the GMI-ratio related with the coexistence of two different contributions originated by two different magnetic domain structure for the stress-annealed microwires. The observed experimental results are discussed in terms of the internal stresses relaxation derived from the annealing procedures, the induced magnetic anisotropy and local atomic reordering. The studies of Co-rich microwires with low and positive magnetostriction coefficient and low Curie temperature are potentially suitable for development of smart composites with embedded microwires for wireless temperature monitoring.

中文翻译：

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退火性能对富钴玻璃涂层微线巨磁阻抗的影响


在本文中，我们研究了常规退火和应力退火对具有低磁致伸缩系数和正磁致伸缩系数以及低居里温度的 Co_65.3Si_12.0B_10.2Cr_8.5Fe_3.9Mo_0.1 微线的磁性能和巨磁阻抗 （GMI） 效应的影响。在高达 350^∘C 和 320 MPa 的广泛退火条件下观察到 GMI 效应和磁滞回线的显着调谐能力。我们报告了 GMI 比率的双峰磁场依赖性的出现，这与应力退火微线的两种不同磁畴结构产生的两种不同贡献的共存有关。从退火程序得出的内应力松弛、诱导磁各向异性和局部原子重新排序方面讨论了观察到的实验结果。对具有低磁致伸缩系数和正磁致伸缩系数以及低居里温度的富钴微线的研究可能适用于开发具有嵌入式微线的智能复合材料，用于无线温度监测。