In this study, nitrogen dioxide (NO₂) gas sensors based on zinc oxide-silicon (ZnO–Si) and zinc oxide-silicon dioxide-silicon (ZnO–SiO₂–Si) configurations were fabricated to study their response to ultraviolet (UV) radiation at room temperature (300 K). Single and polycrystalline ZnO layers were deposited using atomic layer deposition (ALD) on silicon and silica substrates. The structure and composition of the films were studied using various characterization techniques. The current-voltage (I-V) characteristics of these sensors’ UV illumination (~365 nm) have been investigated. The gas sensing performance of both configurations was analyzed with and without the UV source for varied concentrations of NO₂ gas. Exposure to UV light significantly improved the recovery times of the sensors. Specifically, the recovery time for the Si-based sensor decreased from 1578 seconds to 24 seconds, while for the SiO₂-based sensor, it reduced from 540 seconds to 5 seconds. The response time of ZnO–Si was found to be 2 seconds and ZnO–SiO₂–Si to be 1 second. Under irradiation, the sensitivity factor increased from 8.29 × 10⁷ to 5.79 × 10^8% ppm^-1 for the ZnO–SiO₂–Si sensor. It reached a maximum value of 9.12 × 10¹¹% ppm^-1, which is extremely high compared to similar devices.

中文翻译：

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使用 ALD 生长的 ZnO-SiO2/Si 薄膜紫外传感器进行超灵敏 NO2 气体检测


在这项研究中，制造了基于氧化锌-硅 （ZnO-Si） 和氧化锌-二氧化硅-硅 （ZnO-SiO_2-Si） 配置的二氧化氮 （NO₂） 气体传感器，以研究它们在室温 （300K） 下对紫外线 （UV） 辐射的响应。使用原子层沉积 （ALD） 在硅和二氧化硅衬底上沉积单晶和多晶 ZnO 层。使用各种表征技术研究了薄膜的结构和成分。已经研究了这些传感器的紫外照明 （~365nm） 的电流-电压 （I-V） 特性。对于不同浓度的 NO₂ 气体，分析了两种配置的气体传感性能，无论有没有紫外线源。暴露在紫外线下可显著缩短传感器的恢复时间。具体来说，硅基传感器的恢复时间从 1578 秒缩短到 24 秒，而_{硅基传感器}的恢复时间从 540 秒缩短到 5 秒。发现 ZnO-Si 的响应时间为 2 秒，ZnO-SiO_2-Si 的响应时间为 1 秒。在辐照下，ZnO-SiO_2-Si 传感器的灵敏度因子从 8.29 × 10⁷ 增加到 5.79 × 10^{8% ppm-1}。它达到了 9.12 × 10¹¹% ^ppm-1 的最大值，与类似设备相比，这是非常高的。