Non-volatile memristors dynamically switch between high (HRS) and low resistance states (LRS) in response to electrical stimuli, essential for electronic memories, neuromorphic computing, and artificial intelligence. High-entropy Prussian blue analogs (HE-PBAs) are promising insertion-type battery materials due to their diverse composition, high structural integrity, and favorable ionic conductivity. This work proposes a non-volatile, bipolar memristor based on HE-PBA. The device, featuring an active layer of HE-PBA sandwiched between Ag and ITO electrodes, is fabricated by inkjet printing and microplotting. The conduction mechanism of the Ag/HE-PBA/ITO device is systematically investigated. The results indicate that the transition between HRS and LRS is driven by an insulating-metallic transition, triggered by extraction/insertion of highly mobile Na⁺ ions upon application of an electric field. The memristor operates through a low-energy process akin to Na⁺ shuttling in Na-ion batteries rather than depending on formation/rupture of Ag filaments. Notably, it showcases promising characteristics, including non-volatility, self-compliance, and forming-free behavior, and further exhibits low operation voltage (V_SET = −0.26 V, V_RESET = 0.36 V), low power consumption (P_SET = 26 µW, P_RESET = 8.0 µW), and a high R_OFF/R_ON ratio of 10⁴. This underscores the potential of high-entropy insertion materials for developing printed memristors with distinct operation mechanisms.

中文翻译：

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用于高级非易失性忆阻器件的印刷高熵普鲁士蓝类似物


非易失性忆阻器响应电刺激，在高电阻 （HRS） 和低电阻状态 （LRS） 之间动态切换，这对于电子存储器、神经形态计算和人工智能至关重要。高熵普鲁士蓝类似物 （HE-PBA） 因其成分多样化、结构完整性高和良好的离子导电性而成为有前途的插入型电池材料。这项工作提出了一种基于 HE-PBA 的非易失性双极忆阻器。该器件具有夹在 Ag 和 ITO 电极之间的 HE-PBA 活性层，通过喷墨打印和微绘图制造。系统研究了 Ag/HE-PBA/ITO 器件的传导机制。结果表明，HRS 和 LRS 之间的转变是由绝缘金属转变驱动的，该转变是由施加电场时高流动性 Na⁺ 离子的提取/插入触发的。忆阻器通过类似于 Na 离子电池中的 Na⁺ 穿梭的低能量过程运行，而不是依赖于 Ag 细丝的形成/断裂。值得注意的是，它表现出有前途的特性，包括非易失性、自顺向和无成型行为，并进一步表现出低工作电压（V_SET = −0.26 V，V_RESET = 0.36 V）、低功耗（P_SET = 26 μW，P _RESET = 8.0 μW）和 10⁴ 的高 R_OFF/R_ON 比率.这突显了高熵插入材料在开发具有不同操作机制的印刷忆阻器方面的潜力。