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Correction to Epitaxial Growth of Large‐Area Monolayers and Van der Waals Heterostructures of Transition‐Metal Chalcogenides via Assisted Nucleation
Advanced Materials ( IF 27.4 ) Pub Date : 2024-11-20 , DOI: 10.1002/adma.202417264 Akhil Rajan, Sebastian Buchberger, Brendan Edwards, Andela Zivanovic, Naina Kushwaha, Chiara Bigi, Yoshiko Nanao, Bruno K. Saika, Olivia R. Armitage, Peter Wahl, Pierre Couture
中文翻译:
通过辅助成核校正大面积单层和过渡金属硫属化物的范德华异质结构的外延生长
更新日期:2024-11-20
Advanced Materials ( IF 27.4 ) Pub Date : 2024-11-20 , DOI: 10.1002/adma.202417264 Akhil Rajan, Sebastian Buchberger, Brendan Edwards, Andela Zivanovic, Naina Kushwaha, Chiara Bigi, Yoshiko Nanao, Bruno K. Saika, Olivia R. Armitage, Peter Wahl, Pierre Couture
Adv. Mater. 2024, 36, 2402254
DOI: 10.1002/adma.202402254
In paragraph 2 of the “Film Characterization” section, the text “Particle-induced X-ray emission (PIXE) data were collected using 2.5 MeV He+ beam to better characterize Ge, with a spot size of 5 µm × 5 µm.” was incorrect. This should have read: “Particle-induced X-ray emission (PIXE) data were collected using 2.5 MeV H+ beam to better characterize Ge, with a spot size of 5 µm × 5 µm.” PIXE analysis was done with a hydrogen beam.
We apologize for this error.
中文翻译:
通过辅助成核校正大面积单层和过渡金属硫属化物的范德华异质结构的外延生长
Adv. Mater.2024 年 36 月 2402254 日
在“薄膜表征”部分的第 2 段中,文本“使用 2.5 MeV He+ 光束收集粒子诱导 X 射线发射 (PIXE) 数据以更好地表征 Ge,光斑尺寸为 5 μm × 5 μm”是不正确的。这应该是:“使用 2.5 MeV H+ 光束收集粒子诱导 X 射线发射 (PIXE) 数据,以更好地表征光斑尺寸为 5 μm × 5 μm 的 Ge。PIXE 分析是用氢离子束完成的。
对于此错误,我们深表歉意。