With the demand for wearable and low-energy consumption devices, it is essential to fabricate high-performance and fast-response flexible photodetectors by an effective, easy and low-cost technique. In this regard, MoSe2-based transition metal dichalcogenides are promising materials for their potential applications in future nanoscale electronic/optoelectronic devices. The current work demonstrates the optical, electrical, and photoresponsivity performance of the V1-xMoxSe2 (x=0, 0.05, 0.10, 0.15, 0.20) nanocomposites synthesized by a facile hydrothermal method with varying V and Mo content. The X-ray diffraction analysis investigated the polycrystalline structure. The Raman study confirmed the existence of VSe2 and MoSe2 phases in the prepared samples. The bare VSe2 shows nano flower-like morphology, whereas the Mo-doped V1-xMoxSe2 structure changed to nanosheets as verified from the field emission scanning electron microscopy. The optical analysis showed the bandgaps of the synthesized samples varying between 1.2 eV to 2.5 eV. These low-bandgap materials have significant roles in optoelectronic devices like LEDs, solar cells, and photodetectors. The oxidation states of the different elements were probed from the X-ray photoelectron spectroscopy. The I-V measurement showed better electrical conductivity. The photodetection measured yield figures of merit such as sensitivity, responsivity, and detectivity values. A high Ion/Ioff ratio is demonstrated by the time-dependent photo response characteristics of the VSe2 sample, which is remarkable for creating sensitive photodetectors.

中文翻译：

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基于水热合成的 V1-xMoxSe2 纳米片的高性能、快速响应光电探测器


随着对可穿戴和低能耗设备的需求，通过一种有效、简单和低成本的技术制造高性能和快速响应的柔性光电探测器至关重要。在这方面，MoSe2 基过渡金属二硫化物是未来纳米级电子/光电器件中潜在应用的有前途的材料。目前的工作证明了通过具有不同 V 和 Mo 含量的简单水热法合成的 V1-xMoxSe2 （x=0， 0.05， 0.10， 0.15， 0.20） 纳米复合材料的光学、电学和光响应性能。X 射线衍射分析研究了多晶结构。拉曼研究证实了制备样品中存在 VSe2 和 MoSe2 相。裸露的 VSe2 呈现纳米花状形态，而 Mo 掺杂的 V1-xMoxSe2 结构转变为纳米片，从场发射扫描电子显微镜验证。光学分析显示，合成样品的带隙在 1.2 eV 至 2.5 eV 之间变化。这些低带隙材料在 LED、太阳能电池和光电探测器等光电器件中发挥着重要作用。从 X 射线光电子能谱中探测不同元素的氧化态。I-V 测量显示出更好的导电性。光检测测量的产生品质因数，例如灵敏度、响应度和检测率值。VSe2 样品的时间依赖性光响应特性证明了高离子/Ioff 比，这对于创建灵敏的光电探测器来说非常显着。