The electron beam melting (EBM) technique was employed to prepare ultra-highly pure (99.999 wt%) Tantalum (Ta) cast ingot for application in chips. Subsequently, the Ta cast ingot were forged, rolled, and annealed with different durations to gain three different grain sizes (centimeter scale, 99.8 μm, and 36.7 μm). Sputtering experiments conducted under identical conditions revealed that the rolled target (36.7 μm) film deposition rate was increased by 60.6 % compared to the cast ingot target with a centimeter-scale grain size (columnar crystal). Ta targets with a fine grain size and homogeneous distribution demonstrate superior film deposition performance. The sputtering rate is directly related to the atomic packing density of grains. The (111)-oriented grains of BCC targets (Ta target) exhibit sputtering resistance, and the order of sputtering rate of Ta atoms was S(101) > S(001) > S(111).

中文翻译：

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晶粒尺寸和取向对钽磁控溅射产率的影响


采用电子束熔炼 （EBM） 技术制备超高纯度 （99.999 wt%） 钽 （Ta） 铸锭，用于芯片应用。随后，对 Ta 铸锭进行锻造、轧制和退火，以获得三种不同的晶粒尺寸（厘米级、99.8 μm 和 36.7 μm）。在相同条件下进行的溅射实验表明，与具有厘米级晶粒尺寸的铸锭靶材（柱状晶体）相比，轧制靶材 （36.7 μm） 薄膜沉积速率提高了 60.6 %。具有细晶粒尺寸和均匀分布的 Ta 靶材表现出优异的薄膜沉积性能。溅射速率与晶粒的原子堆积密度直接相关。BCC 靶材 （Ta 靶材） 的 （111） 取向晶粒表现出抗溅射性，Ta 原子的溅射速率顺序为 S（101） > S（001） > S（111）。