We have studied the operation of the ScAlN/GaN high-electron mobility transistor (HEMT) at high temperatures up to 700 K (423 °C). A maximum drain current density of ∼2 A/mm and an on-resistance of ∼1.5 Ω·mm was measured at room temperature (RT). The epi-structure exhibited a very high two-dimensional electron gas (2DEG) density of 6 × 1013 cm−2 at RT using Hall measurement. The Sc0.15Al0.85N barrier, nearly lattice matched to the GaN channel, showed a drain current reduction of ∼50% at 700 K. The decrease in 2DEG mobility, which leads to an increase in sheet resistance, is mostly responsible for this reduction in drain current. However, an excellent electrostatic control was achieved at 700 K with the drain current value exceeding 1 A/mm, which is 2 times higher compared to that of AlGaN/GaN HEMTs reported previously. These results indicate that ScAlN/GaN HEMTs are a promising candidate for high-temperature and high-power electronic applications.

中文翻译：

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温度对 ScAlN/GaN 高电子迁移率晶体管性能的影响


我们研究了 ScAlN/GaN 高电子迁移率晶体管 （HEMT） 在高达 700 K （423 °C） 的高温下的运行情况。在室温 （RT） 下测得的最大漏极电流密度为 ∼2 A/mm，导通电阻为 ∼1.5 Ω·mm。使用霍尔测量，外延结构在 RT 上表现出非常高的二维电子气 （2DEG） 密度，为 6 × 1013 cm-2。Sc0.15Al0.85N 势垒几乎与 GaN 通道晶格匹配，在 700 K 时漏极电流降低约 50%。2DEG 迁移率的降低导致薄片电阻的增加，是漏极电流降低的主要原因。然而，在 700 K 时实现了出色的静电控制，漏极电流值超过 1 A/mm，与之前报道的 AlGaN/GaN HEMT 相比高 2 倍。这些结果表明，ScAlN/GaN HEMT 是高温和高功率电子应用的有前途的候选者。