The digital–analog hybrid resistive random access memory can not only be used in computing in memory integrated circuits but also adapt to various requirements, such as achieving lower integration complexity. In this work, resistive memory devices with Ta/SiNx/TiN/Pt structures were fabricated, which exhibit a gradual analog or abrupt digital resistive state (DRS) characteristic depending on the different applied voltage range. The experimental results indicate that different RS switching of these devices is due to the change in the conductive mechanism in the SiNx/TiN double-layer structure. The Schottky barrier at the SiNx/TiN interface is the cause of analog resistive state characteristics under low sweeping voltage, while the formation/rupture of the conductive filaments formed under large voltage is the reason for the device to exhibit DRS characteristics.

中文翻译：

---

TiN/SiNx 电阻式随机存取存储器件中模拟和数字电阻开关行为共存


数模混合电阻式随机存取存储器不仅可以用于存储器集成电路中的计算，还可以适应各种要求，例如实现较低的集成复杂性。在这项工作中，制造了具有 Ta/SiNx/TiN/Pt 结构的电阻存储器件，根据不同的外加电压范围，这些器件表现出逐渐的模拟或突然的数字电阻状态 （DRS） 特性。实验结果表明，这些器件的不同 RS 开关是由于 SiNx/TiN 双层结构中导电机制的变化。SiNx/TiN 界面的肖特基势垒是低扫频电压下模拟电阻状态特性的原因，而大电压下形成的导电丝的形成/断裂是器件表现出 DRS 特性的原因。