Memristive devices based on layered materials have the potential to enable low power electronics with ultra-fast operations toward the development of next generation memory and computing technologies. Memristor performance and switching behavior crucially depend on the switching matrix and on the type of electrodes used. In this work, we investigate the effect of different electrodes in 1D MoO2–MoS2 core shell nanowire memristors by highlighting their role in achieving distinct switching behavior. Analog and digital resistive switching are realized with carbon based passive (multi-layer graphene and multiwall carbon nanotube) and 3D active metal (silver and nickel) electrodes, respectively. Temperature dependent electrical transport studies of the conducting filament down to cryogenic temperatures reveal its semiconducting and metallic nature for passive and active top electrodes, respectively. These investigations shed light on the physics of the filament formation and provide a knob to design and develop the memristors with specific switching characteristics for desired end uses.

中文翻译：

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MoO2-MoS2 核壳纳米线忆阻器中有源和无源电极驱动的电阻开关行为的研究


基于多层材料的忆阻器件有可能实现具有超快速操作的低功耗电子设备，从而发展下一代内存和计算技术。忆阻器的性能和开关行为在很大程度上取决于开关矩阵和所用电极的类型。在这项工作中，我们通过强调它们在实现不同开关行为中的作用，研究了 1D MoO2-MoS2 核壳纳米线忆阻器中不同电极的影响。模拟和数字电阻开关分别使用碳基无源（多层石墨烯和多壁碳纳米管）和 3D 有源金属（银和镍）电极实现。导电丝的温度依赖性电传输研究低至低温，分别揭示了其对无源和有源顶部电极的半导体和金属性质。这些研究阐明了细丝形成的物理特性，并为设计和开发具有特定开关特性的忆阻器提供了一个旋钮，以满足所需的最终用途。