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Dosimetric saturation effect study and correction calculation method of ionization chamber at ultra-high dose rate (FLASH)
Radiation Physics and Chemistry ( IF 2.8 ) Pub Date : 2024-10-22 , DOI: 10.1016/j.radphyschem.2024.112344
Xinle Lang, Zhenguo Hu, Min Li, Kai Tang, Juan Li, Faming Luo, Zhiguo Xu, Ruishi Mao, Chuan Huang, Jiali Fu, Zulong Zhao, Guoqing Xiao

and Purpose: FLASH radiotherapy has aroused strong interest among researchers, but how to monitor dose in real time and lack of generally accepted ion correction model are one of the challenges. This study is based on previous research work, the dosimetric verification of FLASH ionization chamber was performed using a 200 keV electron beam irradiation platform at an ultra-high dose rate. At the same time, the finite element program is written to analyze and calculate the ion correction factor. In addition, the results are compared with the calculation results of Boag model.

中文翻译:


超高剂量率 (FLASH) 下电离室的剂量饱和效应研究及校正计算方法



和目的:FLASH 放疗引起了研究人员的浓厚兴趣,但如何实时监测剂量以及缺乏普遍接受的离子校正模型是挑战之一。本研究基于前人的研究工作,使用 200 keV 电子束照射平台以超高剂量率对 FLASH 电离室进行剂量学验证。同时编写有限元程序来分析和计算离子校正因子。此外,还将结果与 Boag 模型的计算结果进行了比较。
更新日期:2024-10-22
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