When the diameter of semiconductor nanowires is below the Bohr radius, confined excitons in the radial direction can freely move along the elongated axis direction, highlighting their potential for applications in quantum information and optoelectronic devices. Controlled anisotropic growth and oriented attachment are viable strategies for producing ultra‐long semiconductor nanowires with precisely controlled lengths and diameters. Anisotropic ZnSe nanorods are used as the initial seeds for the controlled anisotropic growth and oriented attachment methods. ZnSe nanorods/nanowires with limiting lengths of tens to hundreds of nanometers are produced. The advantages and limitations of semiconductor nanowires via controlled anisotropic growth and oriented attachment are summarized. The perspective for the promotion of controlled anisotropic growth and oriented attachment is discussed, which allows to promotion of the precise synthesis of semiconductor ultra‐long nanowires to develop the fundamental research and applications of ultra‐long semiconductor nanowires.

中文翻译：

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合成半导体纳米线的合理胶体方法：ZnSe 纳米棒的深入研究


当半导体纳米线的直径低于玻尔半径时，径向的受限激子可以沿拉长轴方向自由移动，凸显了它们在量子信息和光电器件中的应用潜力。受控各向异性生长和定向附着是生产具有精确控制长度和直径的超长半导体纳米线的可行策略。各向异性 ZnSe 纳米棒用作受控各向异性生长和定向附着方法的初始种子。生产极限长度为数十至数百纳米的 ZnSe 纳米棒/纳米线。总结了半导体纳米线通过受控各向异性生长和定向附着的优势和局限性。讨论了促进受控各向异性生长和定向附着的前景，从而促进了半导体超长纳米线的精确合成，以发展超长半导体纳米线的基础研究和应用。