Nanowires composed of a 1:1 stoichiometry of transition metals and chalcogen ions can be fabricated from two-dimensional transition metal dichalcogenides (TMDs) by using electron beam irradiation. Wires fabricated through in situ experiments can be geometrically connected to TMD sheets in various ways, and their physical properties can vary accordingly. Understanding the structural transformation caused by electron beams is critical for designing wire-sheet structures for nanoelectronics. In this study, we report the behavior of nanowires formed inside a monolayer MoS₂ sheet by combining phase-contrast images and large-scale atomistic modeling. We investigate the effect of vacancies on the dynamic evolution of wires, such as rotations with different edge structures and breaking, by considering the interactions between MoS wires and MoS₂ nanosheets. The obtained insights can be applied to other monolayer TMDs to guide the behavior of TMD wires and fabricate favorable geometries for various applications.

中文翻译：

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嵌入式 MoS2 线的原子级动态机制


由过渡金属和硫属离子的 1：1 化学计量组成的纳米线可以通过电子束照射从二维过渡金属硫化物 （TMD） 中制造。通过原位实验制造的电线可以以各种方式在几何上连接到 TMD 板材，并且它们的物理特性可以相应地变化。了解电子束引起的结构转变对于设计纳米电子学的线片结构至关重要。在这项研究中，我们通过结合相差图像和大规模原子建模，报道了在单层 MoS₂ 片内形成的纳米线的行为。我们通过考虑 MoS 线和 MoS₂ 纳米片之间的相互作用，研究了空位对线动态演变的影响，例如具有不同边缘结构的旋转和断裂。获得的见解可以应用于其他单层 TMD，以指导 TMD 线的行为并为各种应用制造有利的几何形状。