Transition metal ions are exceptional emitters of broadband near-infrared (near-IR) luminescence, enabling various applications in photonics and optics; however, their weak absorption and excitation bands often limit conversion performance. Among potential sensitizers, Cr³⁺ stands out, allowing the excitation of Ni²⁺ with broadband visible-near-IR light while preserving luminescence properties. Nevertheless, concentration-induced quenching in doped luminescent solids fundamentally undermines brightness due to a trade-off between internal quantum efficiency and excitation energy dynamics. In this study, we demonstrate unprecedented brightness in the broadband near-IR photoluminescence (PL) of the Cr³⁺–Ni²⁺ system, where single, heavily doped Cr³⁺ exhibits minimal PL, and tuning Ni²⁺ concentration offsets the competitive relationship between the light emitter and quencher. By coupling InGaN light-emitting diodes (LEDs) with an ultrabroadband near-IR PL phosphor, we achieve phosphor-converted LEDs with a record output power of 41.5 mW at 100 mA and a photoelectric efficiency of 19.53% at 20 mA, nearly doubling previous reports. Our findings unveil intrinsic suppression of concentration quenching and eliminate competing energy sinks by emphasizing the dominant role of emitters in downshifting excitation energies, thus opening new avenues for the design of bright, sensitized luminescent materials.

中文翻译：

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推出抑制浓度淬灭增强型宽带近红外辐射器


过渡金属离子是宽带近红外 （near-IR） 发光的特殊发射器，可在光子学和光学领域实现各种应用;然而，它们的弱吸收带和激发带通常会限制转换性能。在潜在的敏化剂中，Cr³⁺ 脱颖而出，它允许用宽带可见光激发 Ni²⁺，同时保持发光特性。然而，由于内部量子效率和激发能动力学之间的权衡，掺杂发光固体中的浓度诱导猝灭从根本上破坏了亮度。在这项研究中，我们展示了 Cr³⁺–Ni²⁺ 系统的宽带近红外光致发光 （PL） 中前所未有的亮度，其中单个、重掺杂的 Cr³⁺ 表现出最小的 PL，调整 Ni²⁺ 浓度抵消了发光体和淬灭剂之间的竞争关系。通过将 InGaN 发光二极管 （LED） 与超宽带近红外 PL 荧光粉耦合，我们实现了荧光粉转换 LED，在 100 mA 时具有创纪录的 41.5 mW 输出功率，在 20 mA 时光电效率为 19.53%，几乎是之前报道的两倍。我们的研究结果通过强调发射极在降低激发能量中的主导作用，揭示了浓度猝灭的内在抑制并消除了竞争性能量汇，从而为设计明亮、敏化发光材料开辟了新途径。