Understanding the complex relationships underlying the performance of organic electronic devices, such as organic field‐effect transistors (OFETs), requires researchers to navigate a multi‐dimensional parameter space that includes material design, solution formulation, fabrication parameters, and device geometry. Herein, a recently developed materials acceleration platform is demonstrated, named the RoboMapper, to perform direct on‐chip fabrication of OFETs by ultrasonic meniscus printing using silicon phthalocyanine (SiPc) derivatives as the semiconductor. OFETs using bis(tri‐n‐butylsilyl oxide) SiPc ((3BS)2‐SiPc) exhibited the best device performance characterized by the highest electron field‐effect mobility (µe). Through optical microscopy and grazing‐incidence wide‐angle X‐ray scattering (GIWAXS), the favorable performance of (3BS)2‐SiPc is attributed to the specific film morphology and molecular packing achieved with optimal print conditions. Investigating the impact of deposition parameters reveals the crucial role of solvent evaporation rate and print speed in achieving high‐quality film formation. Overall, optimal fabrication conditions for (3BS)2‐SiPc devices include slow print speeds and fast evaporating solutions achieved by using a mixture of co‐solvents and an elevated substrate temperature. The results of this work reveal distinct relationships between deposition conditions, film properties, and device performance for each SiPc derivative and emphasize the necessity of high throughput experimentation to comprehensively understand process‐performance relationships in organic semiconductors.

中文翻译：

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用于加速硅酞菁 OFET 中薄膜加工-性能关系的快速原型设计


要了解有机场效应晶体管 （OFET） 等有机电子器件性能背后的复杂关系，研究人员需要浏览一个多维参数空间，包括材料设计、溶液配方、制造参数和器件几何形状。在此，展示了一种最近开发的材料加速平台，名为 RoboMapper，使用硅酞菁 （SiPc） 衍生物作为半导体，通过超声波弯月面打印直接进行 OFET 的片上制造。使用双（三正丁基甲硅烷基氧化物）SiPc （（3BS）2-SiPc） 的 OFETs 表现出最佳的器件性能，其特点是具有最高的电子场效应迁移率 （μe）。通过光学显微镜和掠入射广角 X 射线散射 （GIWAXS），（3BS）2-SiPc 的良好性能归因于在最佳打印条件下实现的特定薄膜形态和分子堆积。研究沉积参数的影响揭示了溶剂蒸发速率和打印速度在实现高质量成膜方面的关键作用。总体而言，（3BS）2-SiPc 器件的最佳制造条件包括缓慢的打印速度和通过使用助溶剂混合物和升高的衬底温度实现的快速蒸发解决方案。这项工作的结果揭示了每种 SiPc 衍生物的沉积条件、薄膜特性和器件性能之间的独特关系，并强调了高通量实验以全面了解有机半导体中的工艺-性能关系的必要性。