Boron nitride (BN) has been a popular material in the field of ultraviolet detection because of its excellent thermal conductivity, high breakdown field strength, high absorption coefficient, and strong resistance to radiation. However, the harsh preparation conditions of its large-scale single crystal films limit the rapid development of its devices. In this work, amorphous BN films were deposited by the magnetron sputtering technique at a relatively low temperatures. On the basis of the films, the asymmetric Schottky junction solar-blind ultraviolet detectors were fabricated by the Ohmic and Schottky contact, respectively. The maximum responsivity and detectivity of the detectors are 6.4 μA/W and 2.5 × 1010 Jones under 20 V bias and 81.1 μW/cm2 ultraviolet light irradiation, respectively. More importantly, the fabricated asymmetric Schottky junction detector also achieves the stable self-powered characteristics due to the presence of its built-in electric field, and the performances are further improved after the rapid thermal annealing. The prepared BN asymmetric Schottky junction detector can operate without the need for the external power supply, which have many advantages such as simplifying the equipment structure and being able to operate in wireless. This work will provide a new reference for the design of the next generation of independent sustainable detectors.

中文翻译：

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基于非晶态氮化硼薄膜的自供电日盲紫外探测器


氮化硼 （BN） 因其优异的导热性、高击穿场强、高吸收系数和较强的抗辐射性而成为紫外检测领域的热门材料。然而，其大规模单晶薄膜的苛刻制备条件限制了其器件的快速发展。在这项工作中，通过磁控溅射技术在相对较低的温度下沉积了非晶态 BN 薄膜。在薄膜的基础上，分别用欧姆接触和肖特基接触制备了不对称肖特基结日盲紫外探测器。在 20 V 偏置和 81.1 μW/cm2 紫外线照射下，探测器的最大响应度和探测率分别为 6.4 μA/W 和 2.5 × 1010 Jones。更重要的是，所制造的非对称肖特基结型检测器由于其内置电场的存在也实现了稳定的自供电特性，并且在快速热退火后性能得到了进一步提高。制备的 BN 非对称肖特基结型检测器可以在不需要外部电源的情况下工作，具有简化设备结构和能够无线工作等许多优点。这项工作将为下一代独立可持续探测器的设计提供新的参考。