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III-nitride semiconductor membrane electronics and optoelectronics for heterogeneous integration
Progress in Quantum Electronics ( IF 7.4 ) Pub Date : 2024-11-09 , DOI: 10.1016/j.pquantelec.2024.100536 Renfeng Chen, Yijian Song, Rui He, Junxi Wang, Jinmin Li, Tongbo Wei
Progress in Quantum Electronics ( IF 7.4 ) Pub Date : 2024-11-09 , DOI: 10.1016/j.pquantelec.2024.100536 Renfeng Chen, Yijian Song, Rui He, Junxi Wang, Jinmin Li, Tongbo Wei
The rapidly developing III-nitrides materials and devices technologies are driving the advancements in hybrid heterogeneous structures for multi-material and multifunctional electronic or optoelectronic integrated systems. Beyond heteroepitaxial growth, the process integrations of freestanding thin-film devices open up more possibilities for high levels of integration and multi-functionalization applications, overcoming the limitations of epitaxial substrate materials. Benefiting from the abundant and exceptional electrical and photoelectrical properties of III-nitrides, the heterogeneous integration of thin-film devices significantly enhances the functional capabilities in the fields of on-chip optical communication, micro-LED display, and flexible sensing. In this review, we present a comprehensive overview of freestanding thin-film device fabrication technology and its integration strategies. We discuss the characteristics of both conventional and advanced III-nitride epilayer transfer technologies, focusing on lift-off, transfer, bonding, and integration process. Promising applications are summarized based on the integration technology of transferable III-nitride thin-film devices. Additionally, we analyze the remaining challenges in manufacturing and application of III-nitride thin-film devices for advanced heterogeneous integrations. The further development of these technologies will promote the research of III-nitrides in pioneering fields, including high-speed photoelectric integrated communication system, cost-effective Micro-LED display and reliable biosensing applications.
中文翻译:
用于异构集成的 III 氮化物半导体膜电子器件和光电子器件
快速发展的 III 氮化物材料和器件技术正在推动多材料和多功能电子或光电集成系统的混合异质结构的进步。除了异质外延生长之外,独立式薄膜器件的工艺集成为高水平集成和多功能化应用开辟了更多可能性,克服了外延衬底材料的局限性。得益于 III 氮化物丰富而卓越的电学和光电特性,薄膜器件的异构集成显着增强了在片上光通信、micro-LED 显示和柔性传感领域的功能能力。在这篇综述中,我们全面概述了独立式薄膜器件制造技术及其集成策略。我们讨论了传统和先进的 III 氮化物外延层转移技术的特点,重点介绍了剥离、转移、键合和集成过程。基于可转移 III 氮化物薄膜器件的集成技术,总结了有前景的应用。此外,我们还分析了用于高级异质集成的 III 氮化物薄膜器件的制造和应用仍然存在的挑战。这些技术的进一步发展将促进 III 氮化物在开创性领域的研究,包括高速光电集成通信系统、具有成本效益的 Micro-LED 显示器和可靠的生物传感应用。
更新日期:2024-11-09
中文翻译:
用于异构集成的 III 氮化物半导体膜电子器件和光电子器件
快速发展的 III 氮化物材料和器件技术正在推动多材料和多功能电子或光电集成系统的混合异质结构的进步。除了异质外延生长之外,独立式薄膜器件的工艺集成为高水平集成和多功能化应用开辟了更多可能性,克服了外延衬底材料的局限性。得益于 III 氮化物丰富而卓越的电学和光电特性,薄膜器件的异构集成显着增强了在片上光通信、micro-LED 显示和柔性传感领域的功能能力。在这篇综述中,我们全面概述了独立式薄膜器件制造技术及其集成策略。我们讨论了传统和先进的 III 氮化物外延层转移技术的特点,重点介绍了剥离、转移、键合和集成过程。基于可转移 III 氮化物薄膜器件的集成技术,总结了有前景的应用。此外,我们还分析了用于高级异质集成的 III 氮化物薄膜器件的制造和应用仍然存在的挑战。这些技术的进一步发展将促进 III 氮化物在开创性领域的研究,包括高速光电集成通信系统、具有成本效益的 Micro-LED 显示器和可靠的生物传感应用。