All-inorganic perovskite CsPbX₃ (X = Cl, Br, or I) and related materials have shown great potential for applications in solar cells, light-emitting diodes, and photodetectors. A kind of heterostructure was proposed comprising CsPbBr₃/ZnS nanocrystals in order to enhance the luminescence properties of CsPbBr₃ nanocrystals. The incorporation of ZnS induces recombination at the interface, facilitating charge transfer and the formation of a type-II heterostructure. The luminescence characteristics of this heterostructure can be modulated by applying pressure. The photoluminescence intensity of the CsPbBr₃/ZnS nanocrystals is significantly enhanced up to 0.29 GPa. With further pressure increase, these nanocrystals exhibit a red shift in emission wavelength, resulting in a high sensitivity (dλ/dP) of 9.59 nm GPa^–1 and an absolute sensitivity (dFWHM/dP) of 6.07 nm GPa^–1. Photoluminescence quenching occurs until the completely undetectable emission at a pressure of 2.38 GPa. The observed anomalous enhancement and wavelength red shift indicate that pressure can promote the transition from free excitons to self-trapping excitons, leading to energy transfer between ZnS and CsPbBr₃. This study enhances the understanding effect of high pressure on luminescent materials in heterostructures.

中文翻译：

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压力对 CsPbBr3/ZnS 纳米晶异质结构中发光特性和能量传递的影响


全无机钙钛矿 CsPbX₃（X = Cl、Br 或 I）和相关材料在太阳能电池、发光二极管和光电探测器中显示出巨大的应用潜力。为了增强 CsPbBr₃ 纳米晶的发光性能，提出了一种包含 CsPbBr₃/ZnS 纳米晶的异质结构。ZnS 的掺入在界面处诱导复合，促进电荷转移和 II 型异质结构的形成。这种异质结构的发光特性可以通过施加压力来调节。CsPbBr₃/ZnS 纳米晶体的光致发光强度显著提高，最高可达 0.29 GPa。随着压力的进一步升高，这些纳米晶体在发射波长上表现出红移，导致高灵敏度 （dλ/dP） 为 9.59 nm GPa^–1 和绝对灵敏度 （dFWHM/dP） 为 6.07 nm GPa^–1。光致发光猝灭发生，直到在 2.38 GPa 的压力下完全无法检测到发射。观察到的异常增强和波长红移表明，压力可以促进从自由激子到自捕获激子的转变，从而导致 ZnS 和 CsPbBr₃ 之间的能量转移。本研究增强了对异质结构中高压发光材料的理解效果。