The emergence of 2D ferroelectrics, sliding ferroelectrics, and 2D ferroelectric semiconductors has greatly expanded the potential applications of two-dimensional ferroelectric field-effect transistors (2D FeFETs) in nonvolatile memory, neuromorphic synapses, and negative capacitance. However, the interaction between ferroelectric and semiconductor layers remains not well understood, and characterization methods to correlate carriers and polarization dynamics at the nanoscale are still lacking. Utilizing in situ scanning microwave impedance microscopy and piezoresponse force microscopy measurements, we employed a Pb(Zr_0.2Ti_0.8)O₃/MoS₂-based 2D FeFET as an example to reveal, with high spatial resolution, the microscopic redistribution of carriers. This study uncovers the microscopic behavior of ferroelectric–semiconductor heterojunctions, paving the way for a deeper understanding of ferroelectric-gating effects and retention issues at the nanoscale in 2D FeFETs.

中文翻译：

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2D FeFET 中受极化调节的载流子分布的纳米级映射


二维铁电体、滑动铁电体和二维铁电半导体的出现极大地扩展了二维铁电场效应晶体管 （2D FeFET） 在非易失性存储器、神经形态突触和负电容方面的潜在应用。然而，铁电层和半导体层之间的相互作用仍未得到很好的理解，并且在纳米尺度上关联载流子和极化动力学的表征方法仍然缺乏。利用原位扫描微波阻抗显微镜和压电响应力显微镜测量，我们采用基于 Pb（Zr_0.2Ti_0.8）O₃/MoS₂ 的 2D FeFET 作为示例，以高空间分辨率揭示了载流子的微观重新分布。本研究揭示了铁电-半导体异质结的微观行为，为更深入地理解 2D FeFET 中纳米级的铁电门控效应和保留问题铺平了道路。