Nanotwinned copper (NT-Cu) and silicon carbon nitride (SiCN) films were modified using N2/Ar plasmas to enhance their bonding strength. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle analyses were then conducted. The contact angles of the NT-Cu films significantly reduced, dropping from 54.8° to 32.1°, while that of the SiCN sharply declined from 51.1° to under 10°. A significant increase in the Si-O bonds was found in the SiCN after the plasma treatment. These factors thus contributed to the enhanced bonding strength (up to 30 and 27.4 MPa for the NT-Cu/NT-Cu and SiCN/SiCN, respectively). Additionally, we performed the SiCN/SiCN room temperature bonding and evaluated its bonding energy using four-point bending tests. We found that the bonding energy increased from 0.49 to 1.2 J/m2 after annealing at 100 °C for 30 min. Transmission electron microscopy (TEM) image revealed some nanovoids at the bonding interface as bonded at room temperature. These voids could be eliminated by further annealing at 250 °C for 1 h. This study offers insights into the plasma surface modification to enhance the bonding strength of NT-Cu/NT-Cu and SiCN/SiCN.

中文翻译：

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使用 N2 和 Ar 等离子体活化对纳米孪晶铜和 SiCN 进行表面改性


使用 N2/Ar 等离子体对纳米孪生铜 （NT-Cu） 和氮化硅碳 （SiCN） 薄膜进行改性，以提高它们的粘合强度。然后进行 X 射线光电子能谱 （XPS） 、原子力显微镜 （AFM） 和接触角分析。NT-Cu 薄膜的接触角显着降低，从 54.8° 下降到 32.1°，而 SiCN 的接触角从 51.1° 急剧下降到 10° 以下。等离子体处理后，发现 SiCN 中的 Si-O 键显着增加。因此，这些因素有助于提高粘合强度（NT-Cu/NT-Cu 和 SiCN/SiCN 的粘合强度分别高达 30 和 27.4 MPa）。此外，我们还进行了 SiCN/SiCN 室温接合，并使用四点弯曲试验评估了其接合能。我们发现，在 100 °C 退火 30 min 后，键合能从 0.49 J/m2 增加到 1.2 J/m2。透射电子显微镜 （TEM） 图像显示，键合界面处的一些纳米空隙是在室温下键合的。这些空隙可以通过在 250 °C 下进一步退火 1 小时来消除。本研究为等离子体表面改性以提高 NT-Cu/NT-Cu 和 SiCN/SiCN 的结合强度提供了见解。