Solution-processed colloidal quantum dots (CQDs) have attracted significant interest for infrared photodetection, particularly due to their easy integration with silicon-based electronics. Among these, silver sulfide (Ag₂S) CQDs stand out as non-toxic infrared semiconductors. However, their application in photodetectors has traditionally shown lower detectivity compared to devices based on lead sulfide and mercury telluride CQDs. Here we demonstrate report Ag₂S CQD/silicon p-n heterojunction photodetectors that exhibit substantially enhanced detectivity. This improvement was facilitated by the pyro-phototronic effect (PPE) in Ag₂S CQDs, which significantly increases the photocurrent. Consequently, the detectivity of the CQD/silicon photodetector was improved by a factor of 17, reaching 4.1×10¹⁰ Jones at 980 nm. These findings pave the way for new opportunities in utilizing CQDs for pyro-phototronic driven, solution-processed optoelectronic devices.

中文翻译：

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高探测率红外光电探测器硅异质结上胶体量子点中的热释光电子效应


溶液处理的胶体量子点 （CQD） 引起了人们对红外光检测的极大兴趣，特别是因为它们易于与硅基电子器件集成。其中，硫化银 （Ag₂S） CQD 作为无毒的红外半导体脱颖而出。然而，与基于硫化铅和碲化汞 CQD 的设备相比，它们在光电探测器中的应用传统上显示出较低的检测率。在这里，我们展示了报告 Ag₂S CQD/硅 p-n 异质结光电探测器，其探测率显着增强。Ag₂S CQD 中的热释光电子效应 （PPE） 促进了这种改进，它显着增加了光电流。因此，CQD /硅光电探测器的探测率提高了 17 倍，在 980 nm 处达到 4.1×10¹⁰ Jones。这些发现为将 CQD 用于热释光电子驱动、溶液处理的光电器件铺平了道路。