The researchers — who are based at the University of Illinois Urbana-Champaign — show that in certain compound semiconductors the defects self-organize into electrically neutral complexes. These push deep-level traps closer to the conduction band edge, where they act as donors. So rather than degrade performance, the CuIn₅Se₈ field-effect transistors with introduced defects show better performance than their less defective parent material, CuInSe₂.

The transistors show an average mobility of 58 cm² V^–1 s^–1, on-state current density of 35 μA μm^–1 and subthreshold swing of 189 mV dec^–1. They were used to make complementary logic circuits and ring oscillators (with solution-processed carbon nanotubes used to make the p-type transistors), and a driving circuit in a 508 pixels per inch micro-light-emitting diode.

伊利诺伊大学厄巴纳-香槟分校的研究人员表明，在某些化合物半导体中，缺陷会自组织成电中性复合物。这些陷阱将深层陷阱推向更靠近导带边缘的位置，在那里它们充当供体。因此，引入缺陷的 CuIn₅Se₈ 场效应晶体管与其缺陷较少的母材料 CuInSe₂ 相比，性能并没有降低。

晶体管的平均迁移率为 58 cm² V^–1 s^–1，导通电流密度为 35 μA μm^–1，亚阈值摆幅为 189 mV dec^–1。它们用于制造互补逻辑电路和环形振荡器（使用溶液处理的碳纳米管制造 p 型晶体管），以及每英寸 508 像素微型发光二极管中的驱动电路。