A 600-V p-GaN gate double channel HEMT (DC-HEMT) is presented with a systematic investigation of the gate characteristics, including the leakage current, breakdown, and reliability under forward bias stress. It is found that the gate leakage of the DC-HEMT is substantially lower than that of the p-GaN single channel HEMT (SC-HEMT) owing to suppressed electron spillover that stems from hole storage in the quantum well upper channel. Consequently, the gate breakdown voltage of the DC-HEMT is improved to 14.7 V compared to 12.2 V of the SC-HEMT. Besides, the gate operating voltage margin of the DC-HEMT is expanded to 4.2 V compared to 3.3 V of the SC-HEMT according to the gate lifetime evaluation.

中文翻译：

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抑制了 E-mode p-GaN 栅极双通道 HEMT 的栅极泄漏并扩大了栅极过驱动窗口


提出了一个 600 V p-GaN 栅极双通道 HEMT （DC-HEMT），系统研究了栅极特性，包括正向偏置应力下的漏电流、击穿和可靠性。研究发现，DC-HEMT 的栅极泄漏大大低于 p-GaN 单通道 HEMT （SC-HEMT），这是由于量子阱上通道中的空穴存储抑制了电子溢出。因此，DC-HEMT 的栅极击穿电压从 SC-HEMT 的 12.2 V 提高到 14.7 V。此外，根据栅极寿命评估，DC-HEMT 的栅极工作电压裕量从 SC-HEMT 的 3.3 V 扩大到 4.2 V。