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Demonstration of normally OFF beta-gallium oxide monolithic bidirectional switch for AC switching applications
Applied Physics Letters ( IF 3.5 ) Pub Date : 2024-11-13 , DOI: 10.1063/5.0237484 Dhanu Chettri, Ganesh Mainali, Juan Huerta Salcedo, Mritunjay Kumar, Vishal Khandelwal, Saravanan Yuvaraja, Xiaohang Li
Applied Physics Letters ( IF 3.5 ) Pub Date : 2024-11-13 , DOI: 10.1063/5.0237484 Dhanu Chettri, Ganesh Mainali, Juan Huerta Salcedo, Mritunjay Kumar, Vishal Khandelwal, Saravanan Yuvaraja, Xiaohang Li
In this work, we report on the beta-gallium oxide (β-Ga2O3) monolithic bidirectional switch. The as-fabricated switch works on enhancement mode operation with a threshold voltage of ∼4 V. Maximum drain current density of 1.93 mA/mm is obtained with a drain voltage of 5 V. The bidirectional switch in a bidirectional mode has an ON/OFF current ratio of ∼107 with ON-resistance of 1.11 and 1.09 kΩ · mm in forward and reverse direction, respectively. However, in diode mode, the device shows an ON/OFF current ratio of 1.6 × 108 and 1.4 × 108 in forward and reverse conduction modes, respectively. The fabricated β-Ga2O3 monolithic bidirectional switch is then used to chop a 60 Hz Alternating Current signal at a chopping frequency of 1 kHz, indicating its potential applications in a range of converters.
中文翻译:
用于交流开关应用的常闭 β-氧化镓单片双向开关演示
在这项工作中,我们报道了 β-氧化镓 (β-Ga2O3) 单片双向开关。制造的开关在阈值电压为 ∼4 V 的增强模式下工作。当漏极电压为 5 V 时,最大漏极电流密度为 1.93 mA/mm。双向模式下的双向开关的导通/关电流比为 ∼107,导通电阻为 1.11 和 1.09 kΩ ·mm 分别在正向和反向。然而,在二极管模式下,该器件在正向和反向导通模式下的开/关电流比分别为 1.6 × 108 和 1.4 × 108。然后,使用制造的 β-Ga2O3 单片双向开关以 1 kHz 的斩波频率对 60 Hz 交流信号进行斩波,表明其在一系列转换器中的潜在应用。
更新日期:2024-11-13
中文翻译:
用于交流开关应用的常闭 β-氧化镓单片双向开关演示
在这项工作中,我们报道了 β-氧化镓 (β-Ga2O3) 单片双向开关。制造的开关在阈值电压为 ∼4 V 的增强模式下工作。当漏极电压为 5 V 时,最大漏极电流密度为 1.93 mA/mm。双向模式下的双向开关的导通/关电流比为 ∼107,导通电阻为 1.11 和 1.09 kΩ ·mm 分别在正向和反向。然而,在二极管模式下,该器件在正向和反向导通模式下的开/关电流比分别为 1.6 × 108 和 1.4 × 108。然后,使用制造的 β-Ga2O3 单片双向开关以 1 kHz 的斩波频率对 60 Hz 交流信号进行斩波,表明其在一系列转换器中的潜在应用。