In this work, the mechanistic insights behind low-frequency noise (LFN) of the advanced ultrathin body and buried oxide fully depleted silicon-on-insulator based metal–oxide–semiconductor field effect transistor (MOSFET) are unveiled. The gate voltage-induced noise power spectral density (SVG) is inversely proportional to frequency f (i.e., SVG∝1/fγ, γ∼ 1 is the frequency exponent) for nMOSFET and pMOSFET. Detailed numerical simulations are performed and well calibrated to reported SVG vs f characteristics. Simulation results are consistent with the reported experimental observations. We demonstrate that LFN is caused by the charge carrier number fluctuation mechanism, which is originated by trapping and de-trapping of channel charge carriers via. bulk traps (from oxygen vacancies) in the hafnium dioxide (HfO2) layer, but not through traps at the silicon dioxide (SiO2)/channel interface. This work therefore explains the similar magnitude of SVG in both nMOSFET and pMOSFET observed experimentally and further suggests that oxygen vacancies inside gate oxides are critical to suppress the low-frequency noise in emerging high-k based MOSFETs.

中文翻译：

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基于 TCAD 的先进 22 nm FDSOI MOSFET 中 1/f 噪声的研究


在这项工作中，揭示了先进的超薄体和埋藏氧化物完全耗尽基于绝缘体上硅的金属氧化物半导体场效应晶体管 （MOSFET） 的低频噪声 （LFN） 背后的机理见解。对于 nMOSFET 和 pMOSFET，栅极电压感应噪声功率谱密度 （SVG） 与频率 f（即 SVG∝1/fγ，γ∼ 1 是频率指数）成反比。执行详细的数值模拟，并根据报告的 SVG 与 f 特性进行了很好的校准。仿真结果与报告的实验观察结果一致。我们证明了 LFN 是由电荷载流子数波动机制引起的，该机制是由通道电荷载流子的捕获和去捕获引起的。二氧化铪 （HfO2） 层中的体阱（来自氧空位），但不是通过二氧化硅 （SiO2）/通道界面处的陷阱。因此，这项工作解释了实验观察到的 nMOSFET 和 pMOSFET 中 SVG 的相似幅度，并进一步表明栅极氧化物内的氧空位对于抑制新兴的高 k 基 MOSFET 中的低频噪声至关重要。