The rare-earth Eu-based compounds with a unique half-filled 4f orbital have attracted an amount of research interest recently. Here, we synthesized EuTe(001) single-crystal thin films on SrTiO3(001) substrate via molecular beam epitaxy (MBE). The scanning tunneling microscopy and x-ray diffraction results indicate that the grown EuTe thin films orientated as EuTe[100]//SrTiO3[110] in plane. In the angle-resolved photoemission spectroscopic (ARPES) measurements, the grown EuTe films show a semiconductive band structure with the valence band maximum lying on the center point of the Brillouin zone. The bandgap size of EuTe was further identified by the optical transmission spectra as 2.2 eV. The antiferromagnetic transition temperature of the grown EuTe film is 10.5 K measured by a superconductive quantum interference device (SQUID). Our results provide important information on the fundamental electronic structures for the further research and applications of the Eu-based compounds.

中文翻译：

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II 型反铁磁半导体 EuTe 薄膜的分子束外延和能带结构


具有独特的半填充 4f 轨道的稀土 Eu 基化合物最近引起了大量研究兴趣。在这里，我们通过分子束外延 （MBE） 在 SrTiO3（001） 衬底上合成了 EuTe（001） 单晶薄膜。扫描隧道显微镜和 X 射线衍射结果表明，生长的 EuTe 薄膜在平面上取向为 EuTe[100]//SrTiO3[110]。在角度分辨光电子能谱 （ARPES） 测量中，生长的 EuTe 薄膜显示出半导电带结构，其价带最大值位于布里渊区的中心点。光透射光谱进一步确定 EuTe 的带隙尺寸为 2.2 eV。生长的 EuTe 薄膜的反铁磁转变温度为 10.5 K，由超导量子干涉器件 （SQUID） 测量。我们的结果为欧盟基化合物的进一步研究和应用提供了基本电子结构的重要信息。