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Crosslinked Silsesquioxane with High Thermal Stability and Low Dielectric Constant by the Autopolymerization of Q-type H-POSS
Polymer ( IF 4.1 ) Pub Date : 2024-11-13 , DOI: 10.1016/j.polymer.2024.127843
Zaoxia Wen, Liang Xu, Xingyu Liu, Linxuan Fang, Lianbin Wu

A novel method was developed for constructing cross-linked Silsesquioxane, utilizing Q-type H-POSS as a precursor. The Piers-Rubinsztajn (P-R) like reaction of Q-type H-POSS was catalyzed by B(C6F5)3, resulting in the production of a prepolymer containing partial Si-H. Upon heating at high temperature in air, the prepolymer transformed into an insoluble and infusible cross-linked polymer, named Cured poly(H-POSS). This polymer exhibited high thermostability, with a 5% weight loss temperature (T5d) of 709 °C and a residue of 92% at 800 °C. Additionally, Cured poly(H-POSS) exhibited high transparency, with a transmittance of 90% in the 400-800 nm wavelength range, and favorable dielectric properties, with a dielectric constant (Dk) of 2.88 at 14 GHz.

中文翻译:


通过 Q 型 H-POSS 的自聚反应获得具有高热稳定性和低介电常数的交联倍半氧烷



开发了一种以 Q 型 H-POSS 为前驱体构建交联倍半硅氧烷的新方法。Q型H-POSS的Piers-Rubinsztajn(P-R)样反应由B(C6F53催化,产生含有部分Si-H的预聚物。在空气中高温加热后,预聚物转化为不溶性且不熔的交联聚合物,称为固化聚 (H-POSS)。这种聚合物表现出高热稳定性,5% 失重温度 (T5d) 为 709 °C,在 800 °C 时残留量为 92%。 此外,固化聚 (H-POSS) 表现出高透明度,在 400-800 nm 波长范围内具有 90% 的透射率,以及良好的介电性能,在 14 GHz 时的介电常数 (DK) 为 2.88。
更新日期:2024-11-13
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