By examining how the noise changed at varying temperature and gate biases, the researchers — who are based at New York University, the Korea Advanced Institute of Science and Technology, King Abdulaziz City for Science and Technology, Brookhaven National Laboratory and the National Institute for Materials Science — could attribute the origins of the random telegraph signals to a single trap species within the hBN. Based on its positive charge and the energy and spatial distribution of the defect, it was found to likely be a carbon atom substitution in a boron site.

Original reference: ACS Nano 18, 28700−28711 (2024)

中文翻译：

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噪声揭示了氮化硼中的单个缺陷

通过检查噪声在不同温度和栅极偏置下如何变化，来自纽约大学、韩国科学技术院、阿卜杜勒阿齐兹国王科技城、布鲁克海文国家实验室和国家材料科学研究所的研究人员可以将随机电报信号的来源归因于 hBN 中的单个陷阱物种。根据其正电荷以及缺陷的能量和空间分布，发现它可能是硼位点中的碳原子取代。

原始参考：ACS Nano18， 28700−28711 （2024）