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High Chern number quantum anomalous Hall effect in monolayer Co3X3SSe (X = Sn, Pb) kagomes
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2024-11-11 , DOI: 10.1039/d4cp03625e
Xiang Yin, Li Deng, Fei Wang, Yanzhao Wu, Junwei Tong, Xianmin Zhang

The high Chern number quantum anomalous Hall effect can offer an ideal platform to develop exotic quantum materials with a dissipationless chiral edge. The investigation of kagome monolayer Co3X3SSe (X = Sn, Pb) materials enables a comprehensive exploration of their structural, magnetoelectric, and topological characteristics through first-principles calculations. The monolayers Co3Sn3SSe and Co3Pb3SSe are classified as kagome ferromagnets, and they exhibit stable perpendicular magnetic anisotropy energy. These materials can achieve the intrinsic high Chern number quantum anomalous Hall effect with C = −3. The band gaps of Co3Sn3SSe and Co3Pb3SSe are 46 and 59 meV, respectively, which are larger than the thermal energy at room-temperature scale. Additionally, our findings demonstrate that both the band gap and magnetic anisotropy energy of the monolayers Co3Sn3SSe and Co3Pb3SSe are sensitive to applied strain. This research presents intriguing and alternative possibilities for advancing intrinsic high Chern number quantum anomalous Hall devices.

中文翻译:


单层 Co3X3SSe (X = Sn, Pb) 笼中的高陈数量子反常霍尔效应



高陈数量子反常霍尔效应可以为开发具有无耗散手性边缘的奇异量子材料提供理想的平台。对笼目单层 Co3X3SSe (X = Sn, Pb) 材料的研究可以通过第一性原理计算全面探索其结构、磁电和拓扑特性。单层 Co3Sn3SSe 和 Co3Pb3SSe 被归类为笼目铁磁体,它们表现出稳定的垂直磁各向异性能量。这些材料可以在 C = −3 的情况下实现本征高陈数量子反常霍尔效应。Co3Sn3SSe 和 Co3Pb3SSe 的带隙分别为 46 和 59 meV,大于室温尺度上的热能。此外,我们的研究结果表明,单层 Co3Sn3SSe 和 Co3Pb3SSe 的带隙和磁各向异性能量都对施加的应变敏感。这项研究为推进本征高陈数量子反常霍尔器件提供了有趣和替代的可能性。
更新日期:2024-11-12
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