The conductive properties and defect structure of Sn-doped 𝛽−Ga2⁢O3 bulk materials with different Sn concentrations are studied in this work. The calculations and experiments of positron annihilation spectroscopy clarify the existence of Ga monovacancies of high concentrations in these semiconductors. The temperature dependencies of positron annihilation parameters and the linear relationship between compensating carrier concentration and Ga vacancy concentration clearly reveal that the −3 charged Ga monovacancies are the dominant intrinsic acceptors in Sn-doped 𝛽−Ga2⁢O3.

中文翻译：

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正电子湮没光谱揭示的 Sn 掺杂β-Ga2O3 中 Ga 空位作为主要内禀受体


本工作研究了不同 Sn 浓度的 Sn 掺杂 β−Ga2O3 块状材料的导电性能和缺陷结构。正电子湮没能谱的计算和实验阐明了这些半导体中存在高浓度的 Ga 单空位。正电子湮没参数的温度依赖性以及补偿载流子浓度和 Ga 空位浓度之间的线性关系清楚地表明，-3 带电的 Ga 单空位是 Sn 掺杂 β-Ga2O3 中的主要本征受体。