Loop punching is the basic physical process of lattice expansion due to the introduction of insoluble gas atoms into the crystalline metals leading to the emission of interstitial atoms and even the formation of prismatic dislocations loops, which therefore dominate the degradation of the material. Despite more than half a century of research, experimentally capturing its fundamental process is still lacking, resulting in known mechanisms being speculated and inferred. Here, we reported for the first time the clearest and most direct experimental details of loop punching and proposed a new mechanism. According to the in-situ experiment, the origin and fate of loop punching were detailed into four stages: incubation, loop punching, synergetic growth, and interaction. At temperatures above ∼ 0.4 Tm, the nucleation and growth of dislocation loops became completely induced by bubble growth, which provided direct evidence of loop punching. The critical bubble size window for experimentally detectable loop punching was defined and evaluated, showing that it became wider and increased in average value with increasing temperature, which made that the critical energetics required for loop punching were further quantified. Furthermore, the subsequent fate of punched-out loops involved not only their mutual coalescence to form super-large 〈111〉 loops but also interactions with adjacent bubbles, during which the bubbles acted as pinning sites decorating the loop edges and mediating their growth. These results provide a comprehensive new understanding of the loop punching mechanism and promisingly contribute to the development of related theories.

中文翻译：

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Mo-5Re 合金线圈冲孔的起源和命运


环冲孔是晶格膨胀的基本物理过程，由于不溶性气体原子被引入晶体金属中，导致间隙原子的发射，甚至形成棱柱形位错环，因此主导了材料的降解。尽管进行了半个多世纪的研究，但仍然缺乏对其基本过程的实验捕捉，导致人们推测和推断已知的机制。在这里，我们首次报道了环穿孔最清晰、最直接的实验细节，并提出了一种新的机制。根据原位实验，将打圈的起源和归宿细化为孵化、打圈、协同生长和相互作用四个阶段。在高于 ∼ 0.4 Tm 的温度下，位错环的成核和生长完全由气泡生长诱导，这提供了环穿孔的直接证据。定义并评估了实验可检测的线圈冲孔的临界气泡尺寸窗口，结果表明，随着温度的升高，它变得更宽，平均值也随之增加，这使得线圈冲孔所需的临界能量学被进一步量化。此外，穿孔环的后续命运不仅涉及它们相互聚结形成超大的 〈111〉 环，还涉及与相邻气泡的相互作用，在此期间，气泡充当装饰环边缘并介导其生长的固定位点。这些结果为线圈打孔机理提供了全面的新认识，有望为相关理论的发展做出贡献。