Perovskite light-emitting diodes (LEDs) have emerged as a potential solution-processible technology that can offer efficient light emission with high color purity. Here, we explore the device physics of perovskite LEDs using simple analytical and drift-diffusion modeling, aiming to understand how the distribution of electric field, carrier densities, and recombination in these devices differs from those assumed in other technologies such as organic LEDs. High barriers to electron and hole extraction are responsible for the efficient recombination and lead to sharp build-up of electrons and holes close to the electron- and hole-blocking barriers, respectively. Despite the strongly varying carrier distributions, bimolecular recombination is surprisingly uniform throughout the device thickness, consistent with the assumption typically made in optical models. The current density is largely determined by injection from the metal electrodes, with a balance of electron and hole injection maintained by redistribution of electric field within the device by build-up of space charge.

中文翻译：

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钙钛矿发光二极管的器件物理学


钙钛矿发光二极管 （LED） 已成为一种潜在的溶液加工技术，可以提供高色纯度的高效发光。在这里，我们使用简单的分析和漂移扩散模型来探索钙钛矿 LED 的器件物理学，旨在了解这些器件中的电场分布、载流子密度和复合与有机 LED 等其他技术中假设的分布有何不同。电子和空穴提取的高势垒是有效复合的原因，并分别导致电子和空穴阻塞势垒附近的电子和空穴急剧堆积。尽管载流子分布差异很大，但双分子复合在整个器件厚度上出奇地均匀，这与光学模型中通常的假设一致。电流密度主要由金属电极的注入决定，通过空间电荷的积累来重新分配器件内的电场，从而维持电子和空穴注入的平衡。