Ultralow‐Power Programmable 3D Vertical Phase‐Change Memory with Heater‐All‐Around Configuration,Small Methods

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Ultralow‐Power Programmable 3D Vertical Phase‐Change Memory with Heater‐All‐Around Configuration
Small Methods ( IF 10.7 ) Pub Date : 2024-11-05 , DOI: 10.1002/smtd.202401381
Namwook Hur ₁ , Yechan Kim ₂ , Beomsung Park ₁ , Sohui Yoon ₁ , Seunghwan Kim ₃ , Dong-Hyeok Lim ₁ , Hongsik Jeong _{1,

3} , Yoongwoo Kwon ₂ , Joonki Suh _{1,

3}

Affiliation

Recent advancements in phase‐change memory (PCM) technology have predominantly stemmed from material‐level designs, which have led to fast and durable device performances. However, there remains a pressing need to address the enormous energy consumption through device‐level electrothermal solutions. Thus, the concept of a 3D heater‐all‐around (HAA) PCM fabricated along the vertical nanoscale hole of dielectric/metal/dielectric stacks is proposed. The embedded thin metallic heater completely encircles the phase‐change material, so it promotes highly localized Joule heating with minimal loss. Hence, a low RESET current density of 6–8 MA cm−2 and operation energy of 150–200 pJ are achieved even for a sizable hole diameter of 300 nm. Beyond the conventional 2D scaling of the bottom electrode contact, it accordingly enhances ≈80% of operational energy efficiency compared to planar PCM with an identical contact area. In addition, reliable memory operations of ≈105 cycles and the 3‐bits‐per‐cell multilevel storage despite ultrathin (<10 nm) sidewall deposition of Ge2Sb2Te5 are optimized. The proposed 3D‐scaled HAA‐PCM architecture holds promise as a universally applicable backbone for emerging phase‐change chalcogenides toward high‐density, ultralow‐power computing units.

中文翻译：

具有加热器全能配置的超低功耗可编程 3D 垂直相变存储器

相变存储器（PCM）技术的最新进展主要源于材料级设计，这导致了快速耐用的器件性能。然而，仍然迫切需要通过设备级电热解决方案来解决巨大的能源消耗问题。因此，提出了沿电介质/金属/电介质堆栈的垂直纳米级孔制造的 3D 加热器全方位（HAA） PCM 的概念。嵌入式薄金属加热器完全包围相变材料，因此它以最小的损失促进了高度局部的焦耳热。因此，即使对于 300 nm 的大孔径，也能实现 6-8 MA cm-2 的低 RESET 电流密度和 150-200 pJ 的工作能量。除了底部电极触点的传统 2D 缩放之外，与具有相同接触面积的平面 PCM 相比，它相应地提高了 ≈80% 的操作能效。此外，尽管 Ge2Sb2Te5 的超薄（<10 nm）侧壁沉积，但优化了 ≈105 个周期的可靠内存操作和每单元 3 位多级存储。所提出的 3D 缩放 HAA-PCM 架构有望成为新兴相变硫属化物向高密度、超低功耗计算单元的普遍适用支柱。

更新日期：2024-11-05

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