MoS₂, with its high specific surface area and tunable electronic structure, has received much interest in the fields of sensing and environmental remediation. Nevertheless, pure MoS₂ has the disadvantages of easy aggregation and high electron–hole pair complexity, which affect its SERS and photocatalytic performance. In this work, a band-gap shrinkage strategy was used to improve MoS₂ performance for SERS and photocatalytic applications. It exhibited high SERS activity (enhancement factor (EF) = 3.61 × 10⁸), great stability (4 mth), broad applicability (CV, CR and R6G), and excellent reusability (with a recovery of 95% after 5 cycles). In addition, the interfacial dipole–dipole interaction and charge transfer (CT) process caused by doping Ru together enhanced the SERS sensitivity, reducing the limit of detection of CV to 10¹¹ M. The degradation rate of 10⁻⁵ M CV was up to 99% after 60 min of Ru-MoS₂ photocatalytic degradation under visible light. This study investigated the effect of doping-induced bandgap shrinkage on charge transfer (CT), providing new insights into improving the sensitivity of semiconductor SERS substrates for efficient low-concentration SERS detection and low-cost sustainable wastewater remediation.

中文翻译：

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掺杂诱导的带隙收缩改变 MoS2 的电子结构，用于有机废水管理


MoS₂ 具有高比表面积和可调电子结构，在传感和环境修复领域引起了广泛关注。然而，纯 MoS₂ 具有易聚集和电子-空穴对复杂性高的缺点，这影响了其 SERS 和光催化性能。在这项工作中，使用带隙收缩策略来提高 SERS 和光催化应用的 MoS₂ 性能。它表现出高 SERS 活性 （增强因子 （EF） = 3.61 × 10⁸）、高稳定性 （4 mth）、广泛的适用性 （CV、CR 和 R6G） 和出色的可重用性 （5 次循环后回收率为 95%）。此外，掺杂 Ru 引起的界面偶极子-偶极子相互作用和电荷转移 （CT） 过程共同提高了 SERS 灵敏度，将 CV 的检测限降低到 10¹¹ M。在可见光下，Ru-MoS₂ 光催化降解 60 min 后，10⁻⁵ M CV 的降解率高达 99%。本研究调查了掺杂诱导的带隙收缩对电荷转移 （CT） 的影响，为提高半导体 SERS 衬底的灵敏度以实现高效的低浓度 SERS 检测和低成本的可持续废水修复提供了新的见解。