As an outstanding two-dimensional (2D) semiconductor among III–V compounds, InAs has attracted significant attention due to its much higher electron mobility than silicon and potential for enhanced opportunities in the field of electronic and optical devices. Recently, 2D semiconducting InAs with a thickness of 4.8 nm has been successfully prepared. Here, we systematically investigated the ballistic transport characteristics of sub-10 nm monolayer InAs (InAsH₂) metal–oxide–semiconductor field-effect transistors (MOSFETs) by using ab initio quantum transport simulation, which includes on-state current, subthreshold swing, intrinsic delay time, and power consumption. The results suggest that the monolayer (ML) InAsH₂ MOSFETs exhibit excellent performance with a beneficial doping concentration and underlap, which can meet the high-performance requirements of the International Technology Roadmap for Semiconductors (ITRS) for the 2013 version until the length of the gate is decreased to 4.0 nm. Moreover, we studied the influence of high-k dielectric effects. We found that both the on-state current and subthreshold swing with a 5.0 nm-gate-length are apparently improved. This work indicates that ML InAsH₂ is a suitable nominee for the upcoming generation of channel materials.

中文翻译：

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用于高性能应用的亚 10 nm 单层 InAs 晶体管的弹道传输


作为 III-V 族化合物中出色的二维 （2D） 半导体，InAs 因其比硅高得多的电子迁移率以及在电子和光学器件领域增加机会的潜力而引起了广泛关注。最近，成功制备了厚度为 4.8 nm 的 2D 半导体 InAs。在这里，我们使用 ab initio 量子传输模拟系统研究了亚 10 nm 单层 InAs （InAsH₂） 金属氧化物半导体场效应晶体管 （MOSFET） 的弹道传输特性，其中包括导通电流、亚阈值摆幅、本征延迟时间和功耗。结果表明，单层 （ML） InAsH₂ MOSFET 表现出优异的性能，具有有益的掺杂浓度和底部重叠，可以满足 2013 年版国际半导体技术路线图 （ITRS） 的高性能要求，直到栅极长度减少到 4.0 nm。此外，我们研究了高 k 介电效应的影响。我们发现，导通电流和 5.0 nm 栅极长度的亚阈值摆幅都明显得到改善。这项工作表明 ML InAsH₂ 是下一代通道材料的合适提名者。