The hybrid integration of two-dimensional (2D) materials on various photonic integration platforms has attracted widespread research interest because of the new functionalities enabled by the 2D materials for applications in photodetection, optical modulation and nonlinear optical signal processing. Tellurium is known to have high mobility, and quasi-2D tellurium is stable in air and has a small bandgap that may make it suitable for platform-independent scalable integration of high-performance photodetectors in the infrared band. In this work, we propose and implement a new structure for integrating tellurium with silicon nitride (SiN) waveguides, adding photodetector capability to an otherwise passive waveguide platform. At a wavelength of 1570 nm, the fabricated tellurium photodetector has an experimentally measured responsivity of 0.5 A W⁻¹ at 1 V bias voltage and a bandwidth of 12 GHz. We show that the bandwidth is not limited by the carrier transit time, but rather by the RC time constant, which can be further improved.

中文翻译：

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氮化硅平台上的高速红外碲光电探测器


二维 （2D） 材料在各种光子集成平台上的混合集成引起了广泛的研究兴趣，因为 2D 材料为光探测、光调制和非线性光信号处理应用提供了新功能。众所周知，碲具有高迁移率，准 2D 碲在空气中稳定，并且具有小带隙，这可能使其适合在红外波段中独立于平台的可扩展集成高性能光电探测器。在这项工作中，我们提出并实现了一种将碲与氮化硅 （SiN） 波导集成在一起的新结构，为原本无源的波导平台增加了光电探测器功能。在 1570 nm 的波长下，制造的碲光电探测器在 1 V 偏置电压和 12 GHz 带宽下具有 0.5 A ^W-1 的实验测量响应度。我们表明，带宽不受载波传输时间的限制，而是受 RC 时间常数的限制，这可以进一步改进。