We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO₂ semiconductor and high-k ZrO₂ dielectric, both formed through combustion-assisted sol-gel processes. This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating. The combustion ZrO₂ films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network, which contributes to the low leakage current and frequency-independent dielectric properties. The ZrO₂/SnO₂ TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics, including a field-effect mobility of 26.16 cm²/Vs, a subthreshold swing of 0.125 V/dec, and an on/off current ratio of 1.13 × 10⁶ at a low operating voltage of 3 V. Furthermore, we demonstrated flexible ZrO₂/SnO₂ TFTs with robust mechanical stability, capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm, achieved by scaling down the device dimensions.

我们使用 SnO₂ 半导体和高 k ZrO₂ 电介质开发了高性能柔性氧化物薄膜晶体管 （TFT），这两种半导体都是通过燃烧辅助溶胶凝胶工艺形成的。该方法涉及燃料和氧化剂的放热反应，以产生高质量的氧化膜，而无需大量的外部加热。燃烧 ZrO₂ 薄膜具有无定形结构，与氧化物网络相对应的氧比例更高，这有助于实现低泄漏电流和与频率无关的介电性能。使用燃烧合成技术在柔性衬底上制造的 ZrO₂/SnO₂ TFT 表现出优异的电气特性，包括 26.16 cm²/Vs 的场效应迁移率、0.125 V/dec 的亚阈值摆幅和 1.13 × 10⁶ 的开/关电流比，在 3 V 的低工作电压下。此外，我们还展示了柔性 ZrO₂/SnO₂ TFT，具有强大的机械稳定性，能够承受 5000 次弯曲测试，弯曲半径为 2.5 mm，这是通过缩小器件尺寸实现的。