Germanium‐Tin (GeSn) is a novel semiconductor Group IV alloy that can be tuned from indirect to direct bandgap semiconductors by adjusting the Sn content. This property makes this alloy class attractive for integrated photonic applications and high‐mobility electronic devices. In this work, the GeSn alloy properties are investigated in the view of applications fields such as spintronics and quantum computing. Using low‐temperature magneto‐transport measurements, electron interference effects and deriving typical mesoscopic benchmark parameters such as the phase‐coherence length in GeSn‐based Hall bar structures for Sn concentrations up to 14 at.% is investigated. Furthermore, Shubnikov–de Haas oscillations provide direct access to the effective mass of the Γ‐valley electrons as well as the charge carrier mobility. This work provides a new insight into advanced group IV alloys desired for the study of spin dynamics and its quantum computing applications.

中文翻译：

---

GeSn 合金在 Si 上的相干输运


锗锡 （GeSn） 是一种新型半导体 IV 类合金，可以通过调整 Sn 含量从间接带隙半导体调整为直接带隙半导体。这一特性使该合金类别对集成光子应用和高迁移率电子设备具有吸引力。在这项工作中，从自旋电子学和量子计算等应用领域的角度研究了 GeSn 合金的性能。使用低温磁传输测量，研究了电子干涉效应并推导出典型的介观基准参数，例如 Sn 浓度高达 14 at.% 的基于 GeSn 的霍尔棒结构中的相位相干长度。此外，Shubnikov-de Haas 振荡提供了对Γ谷电子有效质量以及电荷载流子迁移率的直接访问。这项工作为研究自旋动力学及其量子计算应用所需的高级 IV 族合金提供了新的见解。