Inorganic semiconductor nanowires, known for their exceptional electronic properties and mechanical flexibility, are widely regarded as the ideal 1D channel materials for creating high‐performance flexible electronics. In this work, the integration of ordered arrays of silicon nanowire (SiNW) field effect transistors (FETs) directly onto flexible plastic substrates is showcased. The self‐aligned crystalline SiNW multi‐channels are first grown through an in‐plane solid–liquid–solid mechanism on rigid substrates, and then efficiently transferred in‐batch onto flexible polyethylene terephthalate (PET) plastics. The FETs constructed on these transferred SiNW channels exhibit outstanding performance, with a high on/off current ratio of >105, a low subthreshold swing of 175 mV dec−1, and remarkable mechanical stability that can endure an extremely small bending radius of 0.5 mm for 1000 cycles. Furthermore, inverter logics are also successfully demonstrated on plastic substrates, highlighting a prominent routine for scalable integration of high‐quality SiNW channels in the development of low‐cost, high‐performance flexible displays and wearable electronics.

中文翻译：

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塑料衬底上的高性能柔性硅纳米线场效应晶体管


无机半导体纳米线以其卓越的电子性能和机械柔韧性而闻名，被广泛认为是制造高性能柔性电子产品的理想 1D 通道材料。在这项工作中，展示了硅纳米线 （SiNW） 场效应晶体管 （FET） 的有序阵列直接集成到柔性塑料衬底上。自对准结晶 SiNW 多通道首先通过面内固-液-固机制在刚性基板上生长，然后有效地分批转移到柔性聚对苯二甲酸乙二醇酯 （PET） 塑料上。在这些转移的 SiNW 通道上构建的 FET 表现出出色的性能，具有 >105 的高开/关电流比、175 mV dec-1 的低亚阈值摆幅，以及出色的机械稳定性，可以承受 0.5 mm 的极小弯曲半径 1000 次循环。此外，逆变器逻辑还在塑料基板上成功演示，突出了在低成本、高性能柔性显示器和可穿戴电子产品的开发中，高质量 SiNW 通道可扩展集成的突出例程。